High-speed epitaxial growth of AlN above by hydride vapor phase epitaxy
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Atmospheric temperature range
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Unique (3̄10) β-Ga 2 O 3 films have been obtained on off-angled sapphire substrates with the best crystal quality reported so far.
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Crystal (programming language)
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Supersaturation
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Deposition
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One of the possibilities to improve optical quality of as-grown shaped sapphire crystals is presented. Replacement of RF susceptor made of normal grade graphite by that made of pyrocarbon covered graphite results in increase of the optical transmission of sapphire ribbons grown by the Stepanov/EFG technique.
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A vertical hot-wall type reactor, with a unique structure designed for controlling both gas flow behavior and thermal gradient (T/mm) on the susceptor surface, was developed. The simulation results indicate that depending on the height of the epitaxy room (h), the T/mm can be changed from a negative to a positive value. Preliminary epitaxial growth experiments resulted in a maximum growth rate of 51 μm/h, 4-inch area uniformity of σ/mean=1.7% for growth rate and σ/mean=21.5 % for doping concentration, and Z1/2 trap concentration of 9×1012 cm-3 at a growth rate of 43 μm/h.
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Temperature Gradient
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A three-dimensional model focusing on fluid flow, heat transfer, species transport and chemical reaction is investigated in a commercial metal-organic chemical vapor deposition (MOCVD) reactor. The key reaction pre-exponential factor is improved to yield more reasonable results matching the experiment data. The growth rate and growth uniformity are carefully investigated with the premixed and non-premixed inlets, as well as with the various temperatures, flow rates and V:III ratios. The susceptor of the reactor is divided into Zone A, Zone B and Zone C according to the heater alignment. The results reveal that the premixed inlet leads to a more uniform growth rate than the non-premixed inlet does. Temperature change of the inlet gas has a negligible influence on the growth rate and uniformity. A larger flow rate and/or lower V:III ratio result in increase of the growth rate and uniformity. However, growth uniformity of the particular zones shows different variable-dependent tendency. The conclusions can be instructive for high-efficiency and better-quality manufacture in industry production with a balance between the growth rate and the growth uniformity.
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By simulating the process of GaN thin film formation, several important parameters affecting the growth rate of the GaN thin film are analyzed numerically, and the relationship between those parameters and the growth rate of GaN is discussed. It is found that the average growth rate of the film increases first and then decreases with the increase of the substrate temperature. It is also found that the growth rate reaches its maximum at a substrate temperature around 800 o C-900 o C, and its maximum value is also related to the flow of TMGa. The results show that the growth rate of the film increases with the increase of TMGa flow rate, and the growth rate is directly proportional to the hydrogen and nitrogen content in the carrier gases under the conditions of high temperatures, whereas it is the opposite under the conditions of lower temperature. In order to improve the uniformity of the film, the growth temperature should be lowered and the nitrogen content in the carrier gas should be increased. The lower rotation speed of the susceptor has little effect on the growth rate and uniformity. But with the increased rotation speed of the susceptor, the growth rate is increased, and the uniformity of the film thickness is improved. The results obtained can be used as a reference for parameter configuration in actual film growth.
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