Optically detected spin resonance of conduction band electrons in InGaAs/InP quantum wells
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Optically detected spin resonance was used to measure the effective g-value of electrons at the conduction band minimum in type-I quantum wells. The experiments showed that the spin resonance is induced by electric dipole transitions, and hence is not limited by the short carrier lifetime that renders magnetic dipole transitions impossible. The spin splittings obtained are strongly anisotropic and dependent on quantum well thickness. A calculation without adjustable parameters, using a three-band Kane model, agrees with the experimental data. The bulk effective g-value of used in this calculation was measured on a thick sample.Band structures and optical gain of nonpolar AlGaN/AlN quantum wells were investigated. It was found that nonpolar quantum wells drastically improved optical gain and anisotropy compared to those of c-plane quantum wells.
Ultraviolet
Optical anisotropy
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Summary form only given. The enhanced electroabsorption associated with the quantum-confined Stark effect has enabled new generations of optoelectronic modulators. However, the high-speed operation of such devices is compromised in deep quantum wells by the accumulation of photogenerated carriers in the quantum wells. While shallow quantum wells have been widely used to circumvent this difficulty, the influence of their pronounced resonant levels on the device behavior is not yet well understood. To illustrate the effect of shallow-well resonances, we consider first a 20-period multiple-quantumwell system formed from 1.46 /spl mu/m InGaAsP 95-A quantum wells separated by 1.1 /spl mu/m InGaAsP 80-A barriers in the intrinsic region of a p-i-n diode.
Electro-absorption modulator
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Arkel and Snoek (1934) reported on the dielectric behavior of concentrated solutions of dipole substances. They found that the polarization shows a marked decrease with increasing dipole concentration. In the present work, it is deduced that such a behavior can be explained by nonlinear electrostatic dipole interaction. At high concentration the counteracting dipolar fields become much higher than external field strengths usually applied to the dielectric. The polarization of N>
Electrostatics
Bond dipole moment
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Band offset
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Abstract Carrier escape and capture processes in a GaInA/GaAs quantum well (QW) and a GaInNAs/GaAs QW are compared through modelling using a rate equation approach. QW compositions corresponding to bandgaps of 0.983 eV, 1.000 eV and 1.100 eV are considered for applications in solar cells. For GaInAs a standard alloy model is used, including strain effects, while for GaInNAs the Band Anticrossing (BAC) model is used. The roles of 1. the conduction band QW barrier height and 2. the corresponding effective mass in affecting the electron escape and capture in the QW are considered in detail. The contribution of photogenerated currents from the barrier and QW are considered. The effect of QW depth is found to be larger than changes in the electron effective mass. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Rate equation
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We study size quantization effects on the conduction band dispersion in GaAs/AlAs quantum wells using a semiempirical tight-binding method. For GaAs well thicknesses between 3 and 11 nm, we find a significant increase of the conduction band mass of up to 50% compared with bulk GaAs. Concomitantly, the confinement reduces the highest achievable group velocities for electrons in the Γ conduction valley of the well by up to 30%. We discuss some of the consequences for quantum-well-based devices.
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Bond dipole moment
Ellipsoid
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Intersubband absorption is measured in the conduction band of GaAs and stepped GaAs/InxGa1−xAs multiple-quantum-wells confined by narrow AlAs barriers. Enhanced absorption from n=1 to n=2 is observed in the stepped wells. This is attributed to relaxation of the intersubband polarisation selection rule.
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We derive the explicit analytical form for the charge-dipole and dipole-dipole interactions in two-dimensional (2D) configuration space. We demonstrate that the reduction of dimensionality can alter the charge-dipole and dipole-dipole interactions in the 2D case. The asymptotics of these interactions at long distances coincide to the charge-dipole and dipole-dipole interactions in three-dimensional configuration space. The obtained charge-dipole and dipole-dipole interactions will find wide application and contribute to the advancement of research on novel two-dimensional materials.
Bond dipole moment
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