Anomalous small angle X-ray scattering study of CdTe quantum dots in ZnTe
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Cadmium telluride photovoltaics
Absorption edge
Anomalous scattering
Photon energy
Small-angle X-ray scattering
Cadmium telluride photovoltaics
Absorption edge
Photon energy
Absorptance
Two-Photon Absorption
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Small-angle X-ray scattering
Small-Angle Scattering
Anomalous scattering
Particle (ecology)
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Absorption edge
Photon energy
Atmospheric temperature range
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Abstract The x‐ray mass attenuation coefficients were measured around the K‐absorption edges of elements in the range 16 ⩽ Z ⩽ 30 using Fe Kα x‐rays of energy 6.400 keV, which is the weighted average energy of Kα 1 and Kα 2 x‐ray components from the 57 Co radioactive source. Kβ x‐rays were almost eliminated by the differential absorption technique. The small difference in energy between Kα 1 and Kα 2 , 13 eV, was shown to be inconsequential by comparing the measured and theoretical values of μ/ρ for standard materials such as Al, Cu, Mo and Ta. The effect of fine structure of the K‐absorption edge on μ/ρ was elucidated by using the compounds of elements in the range 16 ⩽ Z ⩽ 30, containing one element with its K‐absorption edge energy ( E k ) close to the incident photon energy ( E x ). The results clearly indicate the validity of the theoretical mixture rule for all those compounds whose K edge is far away from the incident energy but show deviations of as much as 10% for the manganese compound whose K edge is 140 eV above E x and about 12% for the chromium compound whose K edge is 410 eV below E x . These deviations are attributed to the possible influence of resonance Raman scattering when the incident photon energy E x is less than the edge energy and to the influence of EXAFS when E x is more than the edge energy.
Absorption edge
K-edge
Photon energy
Mass attenuation coefficient
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Abstract The optical absorption for photon energies of In x Se 1– x thin films was used to determine the variation of the energy gap and the Urbach energy as a function of temperature in the range from 80 to 340 K at photon energies hν = 1.24 to 2.6 eV. The data were analyzed using the Varshni relation [Physica 34 , 149 (1967)] for the temperature dependence of semiconductor band gaps. The formula by Yang et al. [cf., e.g., J. Phys. Chem. Solids 65 , 1015 (2004)] for the temperature dependence of the energy width of the Urbach absorption edge was also used. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Absorption edge
Photon energy
Atmospheric temperature range
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The optical reflectance of chromium alloys with up to 10 at.% manganese or 50 at.% vanadium was measured at room temperature for photon energies from 0.475 to 2.24 eV. The Cr–Mn alloy system shows a very slight shift of the chromium absorption edge to higher photon energies, whereas the addition of vanadium shifts the absorption edge to lower photon energies. For the alloy with 10 at.% V, the edge disappears to values below the measured photon energy range. The direction of the shift of the absorption edge can be explained qualitatively in a rigid band model with transitions from the t2g band to the Fermi level. This model was previously proposed to explain optical reflection data of chromium-iron alloys.
Absorption edge
Photon energy
Reflection
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The sol–gel process has been applied to the preparation of small‐sized CdTe‐doped silica glasses. Gels synthesized by the hydrolysis of a complex solution of Si(OC 2 H 5 ) 4 , Cd(CH 3 COO) 2 · 2H 2 O, and Te were heated from 350° to 600°C in a H 2 ─N 2 atmosphere to form fine cubic CdTe crystals. The size of CdTe crystals, determined from the line broadening of X‐ray diffraction pattern, increases from 4 to 9 nm in diameter with increasing heat‐treatment temperature. The optical absorption edge shifts to the higher‐energy side as the size of the CdTe crystals decreases. This phenomenon is interpreted in terms of a quantum confinement effect of electron and hole in the CdTe microcrystals.
Cadmium telluride photovoltaics
Absorption edge
Telluride
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Absorption edge
Anomalous scattering
Electron shell
Electron scattering
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This paper discusses how rouse the integrated reflection intensity of the Bijvoet pair for a polar crystal to determine the anomalous scattering factors fGa' and fGa for Ga near the Ga K absorption edge in GaAs. The values of f'Ga and fGa have been calculated from the integrated intensities of the +or-(333) and +or-(555) reflections by using the methods of the present paper. The agreement between calculations and theoretical values is fairly good. Furthermore, the X-ray absorption near-edge structure on the high-energy side near the K absorption edge has been given in the calculated values. Such a structure cannot be predicted by Sasaki's results.
Anomalous scattering
Intensity
Reflection
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