Carbon-doped 980-nm InGaAs strained quantum well lasers grown by metalorganic chemical vapor deposition
Tao YinPeng LianZuntu XuChanghua ChenHongdong ZhaoDeshu ZouJianxing ChenGuo GaoJinyu DuChangbao TaoShen Guang-diHui LüLianxi ZhengLianhui Chen
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Abstract:
Graded-index separate-confinement strained quantum well InGaAs/GaAs/GaAlAs lasers grown by metalorganic chemical- vapor deposition with carbon tetrachloride used as p-doped source for upper cladding layer and the capping layer are studied. By SIMS and electrochemical capacitance-voltage measurements, the desirable quantum well structure and the suitable doping and carrier concentrations profiles are found to be obtained. The grown crystals show good optical characteristics through the photoluminescence spectrum measurement of the upper cladding layer and the active layer. The oxide-stripe and the ridge waveguide stripe lasers are fabricated, the lower threshold current densities 160 A/cm2 (uncoated) with 1500 micrometers long cavity are obtained. The differential quantum efficiency and the output power can be up to 0.4 W/A and 500 mw (uncoated).Keywords:
Cladding (metalworking)
Quantum Efficiency
Carbon fibers
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The homoepitaxial Si-doped Ga2O3 film prepared by metal–organic chemical vapor deposition (MOCVD) was reported in this paper. The film thickness reached 4.5 microns, a relatively high value for MOCVD. The full width at half maxima of the (002) diffraction plane of the film was 26.3 arcsec, thus showing high crystalline quality. The film showed n−-type properties with a doping concentration of 3.6 × 1016 cm−3 and electron mobility of 137 cm2/V·s. In addition, the element composition and stress state of the film were characterized and analyzed. This indicates that the MOCVD, supporting high-quality, high-precision epitaxy, is promising for Ga2O3 power devices.
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This chapter contains sections titled: Gallium Arsenide Technology and ESD Gallium Arsenide Energy-to-Failure and Power-to-Failure Gallium Arsenide ESD Failures in Active and Passive Elements Gallium Arsenide HBT Devices and ESD Gallium Arsenide HBT-Based Passive Elements Gallium Arsenide Technology Table of Failure Mechanisms Indium Gallium Arsenide and ESD Indium Phosphide (InP) and ESD Summary and Closing Comments Problems References
Indium arsenide
Heterojunction bipolar transistor
Arsenide
Indium gallium arsenide
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The characteristics of metalorganic vapor-phase epitaxy (MOVPE)-grown GaN layers have been compared with the chemical features of the gaseous phase during growth. The chemical features were evaluated by growth simulation. Two- and three-flow methods were used for GaN MOVPE. It was found both by growth and by simulation that the two-flow is superior to the three-flow method as regards uniformity and quality of the GaN layers.
Vapor phase
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Background carbon (C) impurity incorporation in metalorganic chemical vapor deposition (MOCVD) grown gallium nitride (GaN) represents one of the major issues in further improving GaN vertical power device performance. This work presents a laser-assisted MOCVD (LA-MOCVD) technique to address the high-C issue in MOCVD homoepitaxial GaN under different growth rate (Rg) regimes and studies the correlations between [C] and Rg. [C] in LA-MOCVD GaN is reduced by 50%–90% as compared to the conventional MOCVD GaN for a wide growth rate range between 1 and 16 μm/h. A mass-transport based model is developed to understand the C incorporation at different Rg regimes. The results obtained from the developed model are in good agreement with experimental data. The model further reveals that LA-MOCVD effectively suppresses C incorporation by reducing the active C species in the gas phase. Moreover, high step velocity in step flow growth mode can facilitate C incorporation at fast Rg, exhibiting steeper C increase. The theoretical model indicates that [C] can be suppressed below 1016 cm−3 with a fast growth rate (Rg) of 10 μm/h by utilizing higher power LA-MOCVD and freestanding GaN substrates with larger off-cut angles.
Carbon fibers
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CuPt-type atomic ordering in InAsySb1-y layers grown by molecular beam epitaxy (MBE) and metal organic vapour phase epitaxy (MOVPE) on (001) substrates was investigated using TED and TEM. The degree of ordering was greater and occurred at higher temperatures, and the ordered domains were larger, in the MOVPE layers compared with the MBE layers. AFM showed surface ridges along the [110] direction for the MOVPE layers and along the [ ] direction for the M-BE layers. We suggest mechanisms to explain why the differences in ordering for the MOVPE and MBE layers occur.
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Vapor phase
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In this work growth of cubic GaN in the selective area (SA) MOVPE process is
simulated. The simulations are restricted to small pattern SA MOVPE growth.
In this case the traditional MOVPE growth a ...
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