Suppression of electron magnetotunneling between parallel two-dimensional GaAs/InAs electron systems by the correlation interaction
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Oscillatory structure in the low temperature current-voltage characteristics of Be-doped p-type GaAs/(AlGa)As/GaAs single barrier tunnelling devices is observed. The oscillations have a period Delta V=39 mV, close to h(cross) omega L/e, where h(cross) omega L is the LO phonon energy in GaAs. They result from energy relaxation of hot holes injected through the tunnel barrier. The sheet density in the hole accumulation layer adjacent to the tunnel barrier is obtained from the magneto-oscillations in I(V) for magnetic field B//J. This allows one to calculate the hole effective mass for tunnelling.
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We describe an approach for the investigation of the interband tunnelling in semiconductor heterostructures made from materials based on the transfer Hamiltonian formalism and kp band model. Contrary to methods used earlier, this approach allows one to obtain not only the transmission coefficients but also resonant tunnelling times corresponding to the transitions through each barrier of a double-barrier structure taking into account the mixing of electron, light-hole (LH) and heavy-hole (HH) states. The equation for the tunnel matrix element is derived using the isotropic eight-band kp model for structures under bias. The analytical formulae for calculation of the tunnel matrix element, transmission coefficients and resonant tunnelling times are obtained for resonant tunnelling structures (RTSs) with type II heterojunctions under flatband conditions. The interband tunnelling in the InAs/AlSb/GaSb RTS is investigated using these formulae. It is shown that the resonant tunnelling times corresponding to transitions through the left and right barriers of a symmetrical RTS may differ by orders of magnitude owing to the spin-orbit interaction in the case of nonzero in-plane wavevector and depend significantly on the mixing of electron, LH and HH states.
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Magnetoquantum oscillations in the tunnel current of a p-type double-barrier AlAs/GaAs/AlAs device are used to measure the buildup of hole space charge in the quantum well over a wide range of bias. These measurements demonstrate sequential tunneling of holes. The effective mass for hole tunneling is estimated.
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An anomaly has been found in the current-voltage characteristics of the electron tunnelling in a cross type Sn-SnOx-Pb junction with a small tunnelling resistance and a very thin tin film, which was proved to correspond to the superconducting-to-normal transition in the tin film. Some properties of the anomaly were also examined. It is pointed out that as the electron tunnelling method requires relatively large current through the junction with a small tunnel resistance in order to measure the energy gap directly, the superconducting state of a very thin film is disturbed by this tunnel current.
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We present an experimental observation of the transition of different indirect tunnelling processes in p-type HgCdTe. The results demonstrate that the indirect tunnel currents via Shockley–Read–Hall traps exhibit a transition from thermally assisted tunneling to two-step indirect tunneling over a temperature range of 25–200 K, which enables independent measurements to be made on the two processes. A 55 meV trap level which contributes strongly to the indirect tunneling mechanisms was estimated by measuring the activation energy.
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Dependence of resonant electron and hole tunnelling times between quantum wells on barrier thickness
We investigated resonant tunnelling of electrons and holes between coupled quantum wells using time-resolved luminescence spectroscopy. Exponential dependence of tunnelling times on barrier width is observed for electrons but not for holes. The tunnelling times of electrons are correctly described by a model which takes into account inhomogeneous broadening.
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The electrical and optical characteristics of tunnel junction light-emitting transistors (TJLETs) with different indium mole fractions (x = 5% and 2.5%) of the InxGa1−xAs base-collector tunnel junctions have been investigated. Two electron tunneling mechanisms (photon-assisted or direct tunneling) provide additional currents to electrical output and resupply holes back to the base region, resulting in the upward slope of I-V curves and enhanced optical output under forward-active operation. The larger direct tunneling probability and stronger Franz-Keldysh absorption for 5% TJLET lead to higher collector current slope and less optical intensity enhancement when base-collector junction is under reverse-biased.
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