Thermal Stress Comparison on Copper and Gold Wire Bonded on Aluminium Bondpad
Vithyacharan RetnasamyZaliman SauliNabilah Fathiah Abd GhaniHussin KamarudinN. AhmadAaron Koay Terr YeowWan Mokhdzani Wan Norhaimi
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This paper reports on the thermal stress comparison between gold (Au) and copper (Cu) wires in wire bonding. The objective of this study is to examine the stress induced during different operating temperatures. ANSYS 11 has been deployed as the simulation tool for this study. This simulation was performed using a three dimensional (3D) non-linear finite element model. The gold and copper wires were attached to an aluminium bondpad on a silicon die. The results showed that when the highest stress concentrates at the area between the ball bond and the bondpad. Moreover, increasing temperature will increase the von mises stress. As for this study, the Cu wire display the greater thermal stress compared to Au wire due to its harder and stiffer material properties.Keywords:
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Wear has been considered as a major issue for ball and socket artificial discs. This paper studies the effects of ball radius and radial clearance of the artificial disc on the von Mises stresses. Different material combinations, used in artificial discs, are compared. FEA simulation using Solidworks has been conducted for different disk geometries. The highest von Mises stress was 714MPa for 10mm radius metal against metal design. The lowest von Mises stress was 14.8MPa for 16mm radius of the UHMWPE/CoCr material combination, which exhibited the lowest von Mises stresses for all the radii of the ball and socket articulation. Considering radial clearance, the lowest von Mises stress was 14.8MPa for 0.015mm clearance of the UHMWPE/CoCr combination. The highest von Mises stress of 100.8MPa with a radial clearance of 0.25mm was recorded for the same combination. There is a strong relation between the von Mises stress and the geometry of the ball and socket of the artificial disc.
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In microelectronic packaging, wire bonding is the preferred method used to form electrical interconnections between integrated circuit chips and a substrate. However, ball lift (i.e., when a ball bond becomes completely detached from the chip) and wire breaking are critical problems that degrade the quality of a wire bond. In this study we considered three parameters of gold-ball bonding—ball bond thickness (7–22μm), gold-wire loop height (180–300μm), and gold-wire loop length (1050–2100μm)—and tried to determine the most suitable bond parameters to realize high-quality gold-ball bonding. For this, we experimented with four different values for each parameter considered. Ball shear and wire pull strength between chip and bond pad were used as parameters to evaluate the quality of the gold-ball bond. Experimental results revealed that the ball shear and wire pull initially increase with an increase in the gold-ball thickness up to 12μm and then starts decreasing gradually with further increases in the gold-ball thickness. Further, ball shear and wire pull between chip and bond pad were found to decrease with increasing gold-wire loop height and loop length. For achieving good-quality gold-ball bonding, a gold-ball thickness of about 12μm, and assuming that the cost of the gold consumed is a major concern, a gold-wire loop height of 180μm and loop length of 1050μm are suggested.
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Abstract Bei Zugabe von Cu(I)‐ bzw. Cu(II)‐chlorid zu einer 1:1‐Mischung der entsprechenden Thioharn‐ Stoffe und Triethylamin in Acetonitril werden die Komplexe (I) isoliert (keine Ausb.‐ Angaben).
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