Photovoltaic properties of GaAs:Be nanowire arrays
A. D. BouravleuvDaria V. BeznasyukE. P. GilsteinMaria TchernychevaAndrés de Luna BugalloLorenzo RiguttiLiang YuY. Y. ProskuryakovI. V. ShtromMaria TimofeevaYu. B. SamsonenkoА. И. ХребтовG. É. Cirlin
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The paper introduces the important role of photolithography in the study of 128×128pixels uncooled focal plane arrays(UFPA). And photolithography plays a vital part in indum bump fabrication. Compared with the matter of indum bump fabricated, we are convicted peel off is actual. With the analysis of the experiment ,we get the excellent indum bump.
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Summarizing advances in light source,optics,illumination technology,mask design,Optical Proximity Correction(OPC)and stage during photolithography pushing forward to nano-fabrication,and describing photolithography advantages in mass production applications,introducing requirements for Next Generation Lithography(NGL),to predict prospects of photolithography.
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This paper presents a continuous patterning method to enhance the productivity of metallic microstructure fabrication. The minimum exposure time and the optimum ultraviolet (UV) intensity were determined for the photoresist (PR) to develop micro PR patterns in continuous roll-type photolithography. To confirm the efficiency of continuous roll-type photolithography, wet etching was performed instead of dry etching as a post-lithography process. Parametric study results showed that the minimum exposure time required for sufficient PR reaction during continuous roll-type photolithography was 0.2 s under 1000 mW cm−2 of UV intensity. This study demonstrated roll-type photolithography and determined the highest production speed for continuous roll-type photolithography to be 24 mm s−1. Continuous photolithography and wet etching were employed to produce narrow copper bus wires for a bezel-less display panel, indicating the practical applications of continuous roll-type photolithography.
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Due to the optical diffraction limit, the resolution of conventional UV photolithography is around ~1 micron, which hinders its potential in sub-micron patterning for broader applications. Efforts have been made to overcome the diffraction limit, such as double/multiple patterning photolithography. Recently, a derivative of UV photolithography called dual-layer photolithography was reported can generate sub-micron linear patterns. In addition to linear patterns, here, we report a double patterning method to get via patterns using dual-layer photolithography. The photomask design rule for double patterning dual-layer photolithography is studied and presented in this work. For demonstration purpose, an example GDSII via file from practical application contains> 10,000 vias was used. The vias with original size of 4 μm would be reduced to 300 nm after the double patterning process.
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This chapter contains sections titled: Gallium Arsenide Technology and ESD Gallium Arsenide Energy-to-Failure and Power-to-Failure Gallium Arsenide ESD Failures in Active and Passive Elements Gallium Arsenide HBT Devices and ESD Gallium Arsenide HBT-Based Passive Elements Gallium Arsenide Technology Table of Failure Mechanisms Indium Gallium Arsenide and ESD Indium Phosphide (InP) and ESD Summary and Closing Comments Problems References
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The paper introduce the photolithography technology.First, the writer explain the process of photolithography.a modern wafer (form IC) will go through a photolithography cycle up to 50 times, some 100 times more.then, the article illustrate photoresist , photoresists are classified two groups :positive resist and negative resist.another important technology is photomask, it is the mass production of IC device,worldwide photomask market was estimated as 3.2 billion in 2012.at the last ,the paper introduce the photolithography machine(tools).The newest feature size of photolithography machine will bring us to 12nm time, maybe 2016. Photolithography technologyPhotolithography, also termed optical lithography or UV lithography, is a process used in microfabrication to pattern parts of a thin film or the bulk of a substrate.It uses light to transfer a geometric pattern from a photomask to a light-sensitive chemical "photoresist", or simply "resist," on the substrate.A series of chemical treatments then either engraves the exposure pattern into, or enables deposition of a new material in the desired pattern upon, the material underneath the photo resist.For example, in complex integrated circuits, a modern CMOS wafer will go through the photolithographic cycle up to 50 times.Simplified illustration of dry etching using positive photoresist during a photolithography process in semiconductor microfabrication (not to scale).A single iteration of photolithography combines several steps in sequence.Modern cleanrooms use automated, robotic wafer track systems to coordinate the process.The procedure described here omits some advanced treatments, such as thinning agents or edge-bead removal.[1]
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Along with the increase in the integrations of IC's, the process dimensions of photolithography is proceeding to more and more fine patterns. In the fabrication of 16 Mega bit DRAM which is the next generation device, the photolithography will be required to have a technology close to half micron geometry work. The role to be played by photoresists in such geometry work is extremely large and important. Under such circumstance, we have developed ultrahigh resolution positive working photoresist, TSMR-V3 which can cope with a half micron photolithography.
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At the beginning of 2009, our group has introduced a new technique that allows fabrication of
photolithographic patterns on the cleaved end of an optical fibre: the align-and-shine
photolithography technique (see A. Petrusis et al., align-and-shine technique for series
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active fibre alignment processes. The technique adapts well to series production, opening
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