Etching of Pyrex glass substrates by inductively coupled plasma reactive ion etching for micro/nanofluidic devices
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The inductively coupled plasma (ICP) reactive ion etching of Pyrex glass was carried out using SF6∕Ar plasmas. The etch rate and surface and sidewall smoothnesses were investigated systematically through their dependence on bias voltage, ICP power, pressure, flow rate, and cathode temperature. Near vertical sidewalls and smooth etched surfaces were obtained by optimized etching parameters. The maximum etch rate, 0.65μm∕min, was achieved at a pressure of 5mTorr, a bias of 720V, and an ICP power of 2500W. Microfluidic devices with various sizes on Pyrex glass have been designed and fabricated. Two types of electrokinetic flow patterns, which are extensional and rotational flows under different biases, have been successfully demonstrated with five cross microfluidic devices.Keywords:
Plasma Etching
Borosilicate glass
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Dry etching behavior of unintentionally-doped β-Ga2O3 has been studied in a BCl3/Ar chemistry using inductively-coupled-plasma reactive ion etching (ICP-RIE). The effects of various etch parameters like ICP and RIE powers, BCl3/Ar gas ratio and chamber pressure on etch rate are studied systematically. Higher ICP, RIE powers and lower pressure conditions are found to enhance the etch rate. A synergic etching mechanism between chemical and physical components is proposed and used to obtain fast Ga2O3 etch rates more than 160 nm/min, nearly-vertical sidewalls and smooth etched surfaces. The findings of this work will enable Ga2O3 vertical devices for power electronics.
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We investigated the Si dry etching process by inductively coupled plasma (ICP) using solid I 2 as an etching gas source. A vertical etching profile and a smooth etched surface, which satisfy the requirements for optical device fabrication, were obtained at a relatively higher substrate temperature. The etching rate of Si was approximately 90 nm/min at 1 Pa and at an ICP/bias RF power of 300/100 W. The I 2 plasma etching technique is a very simple C-, CF-, and H-free process. In addition, we believe that this proposed process is useful for fabricating Si-based optical devices, such as photonic crystals, narrow optical waveguides, and micro-electro-mechanical systems (MEMS).
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The gas plasma etching technique is investigated as a tool of etching micro-patterns ranged from a few microns to submicrons mainly with polycrystalline silicon films as materials to be etched. The gas plasma etching is verified to be the "nearly ideal" chemical etching. The undercutting at the top of the polycrystalline silicon film is nearly equal to the film thickness. It has been found that the etching in the diffused plasma is more suitable for etching micro-patterns and that the resist deformation is not observed after etching. The etching profile depends on the film thickness as well as on the applied RF power.
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Polycrystalline silicon
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We investigated the Si dry etching process by inductively coupled plasma (ICP) using solid I2 as an etching gas source. A vertical etching profile and a smooth etched surface, which satisfy the requirements for optical device fabrication, were obtained at a relatively higher substrate temperature. The etching rate of Si was approximately 90 nm/min at 1 Pa and at an ICP/bias RF power of 300/100 W. The I2 plasma etching technique is a very simple C-, CF-, and H-free process. In addition, we believe that this proposed process is useful for fabricating Si-based optical devices, such as photonic crystals, narrow optical waveguides, and micro-electro-mechanical systems (MEMS).
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A new low-temperature reactive ion etching and microwave plasma etching method is described. Highly anisotropic silicon etching with extremely small width shifts has been performed with high selectivities of 30 for organic resist films. High etch rates of 500 and 1000 nm/min by reactive ion etching and microwave plasma etching, respectively, were achieved with a SF6 gas plasma at low wafer temperatures from −130 to −100 °C. It is concluded that lower temperatures during plasma treatment yield lower side etching and increase the dry etch resistance of organic masks.
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The effect of the basic process parameters of the inductively coupled plasma reactive ion etching (ICP‐RIE) on the fabrication of diamond nanotips using a gas mixture of oxygen (O 2 ) and trifluoromethane (CHF 3 ) is reported. Aim of this study was to obtain an optimal etch recipe for the fabrication of well‐oriented and high aspect‐ratio nanotips out of diamond single crystals. The investigated parameters are ICP and RF powers, gas pressure and flow rate of O 2 and CHF 3 . The ICP and RF powers are found to be the critical process parameters for which nanotip top to bottom height and tip sharpness both increasing with increasing the powers, while gas pressure shows the opposite effect. The optimized etching conditions result in nanotip with average top to bottom height of about 1.1 µm and diameters at the bottom and tip of about 300 nm and 20 nm respectively.
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We have previously reported the residue‐free reactive ion etching (RIE) of in /, /, /, and/ mixtures with additive. The minimum concentration for residue prevention was found to vary with the content of each gas plasma and from gas to gas. In this paper, we report on the reactive ion etching of in the same gas plasmas. The etch rate and etched surface morphology under different etching conditions are presented. A similar pattern of minimum concentrations for the residue‐free RIE of is obtained. This indicates that the process involving additive in the fluorinated plasma could be applied to other polytypes. A residue‐free etching surface can be obtained without the additive only in pure plasma. Other plasma conditions do need various levels of concentration in the plasma to obtain a clean etched surface. In both 3C‐ and the etch rate decreases as the concentration increases. No etching undercut was found for with Al as etching mask. A graphite sheet covering the powered electrode also produced residue‐free RIE but suffers from undesirable side effects. A comparison of minimum levels for residue‐free etching of 3C‐ and in different plasmas is discussed.
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Inductively coupled plasma (ICP) reactive ion etching of SiC was investigated using SF6 plasmas. Etch rates were studied as a function of substrate bias voltage (−3 to −500 V), ICP coil power (500–900 W), and chamber pressure (1–6 mT). The highest etch rate (970 nm/min) for SiC yet reported was achieved. Anisotropic etch profiles with highly smooth surfaces free of micromasking effects were obtained. The addition of O2 to the SF6 plasma was found to slightly increase the etch rate.
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