Infrared to visible frequency upconversion in erbium-doped Ga2S3–La2O3 chalcogenide glass
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Photon Upconversion
Erbium
Chalcogenide glass
Chalcogenide glass
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We report a new experimental and theoretical characterization of high concentration erbium doped silica fibers. Applying a pair-correlation function of erbium ions that is known from x-ray absorption fine structure spectroscopy, we develop a new statistical model of migration-assisted upconversion in erbium doped fibers. We find that the new model provides accurate fitting to our experimental data for the upconversion coefficient as a function of the metastable level population.
Photon Upconversion
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Chalcogenide glass fibers have been successfully used for remote spectroscopy, temperature sensing and CO2 laser power delivery. In bulk form, chalcogenide glass is the most promising candidate for replacing the expensive germanium lenses for thermal imaging.
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We investigate the upconversion quantum yield of β-NaYF4:Er3+ under broadband excitation both experimentally and theoretically. The upconversion quantum yield strongly depends on the erbium concentration, and shows a maximum for an erbium concentration of 25%.
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Quantum yield
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Traditional optomechanical research is rarely studied in compound glass, especially chalcogenide glass. In this paper, the forward and backward Stimulated Brillouin Scattering (SBS) is demonstrated for the first time in a chalcogenide glass microsphere resonator. A high-purity chalcogenide glass microsphere with a high quality (Q) factor of 2.1 × 107 is investigated using a 1550 nm tunable laser. In the experiment, the resulting mechanical vibration frequencies caused by forward and backward SBS are measured at 80 MHz and 7.8 GHz, respectively. The triply resonant Stimulated Brillouin scattering process greatly enhances the light–acoustic interactions, enabling the threshold power to be 344 μW. The work demonstrated in the chalcogenide microresonator is important for the potential applications of chalcogenide glass, which has higher nonlinearity and low absorptions at mid-infrared band.
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Recent developments of 2 µm lasers with Tm, Ho and Tm/Ho doped materials indicate that at high inversion levels loss due to upconversion of excited ions in the upper laser level becomes significant. Although some attempts have been made to characterize these loss mechanisms1·2, indirect pumping of the upper laser level was used in these studies. To measure the upconversion rate it requires a detailed knowledge of the excited state densities. In this study, the Ho ions are selectively excited to 5I7 to create a uniform distribution of excited ions and emissions from higher excited states are monitored as a measure of the upconversion processes.
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Chalcogenide glass
Chalcogen
Lone pair
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This chapter contains sections titled: Introduction Chalcogenide Glasses for Near-Infrared (NIR) Optics Bulk Chalcogenide Glasses (ChG): Composition and Optical Properties Chalcogenide Thin Films and Comparison with Bulk Glass Structural Characterization of Chalcogenide Glasses Raman Spectroscopy NIR Raman Spectroscopy of Bulk Chalcogenide Glasses NIR Waveguide and Micro-Raman Spectroscopy of Chalcogenide Films Photo-Induced Changes in Glassy Chalcogenides Exposure Sensitivity of Chalcogenide Glasses Photo-Induced Waveguides in Bulk ChG Materials Photo-Induced Changes in ChG Films Grating Fabrication in As2S3 Glassy Films Conclusions and Outlook References
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