Simple synthesis of mesoporous boron nitride with strong cathodoluminescence emission
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Cathodoluminescence
Lattice constant
We studied the cathodoluminescence spectra of InxGa1−xN, focusing on the spatial variation of the spectra. Strong inhomogeneity of cathodoluminescence spectra was observed on 22 nm thick InxGa1−xN layers, where the peak energy varied up to 400 meV. In a double quantum well with a well width of 10 Å, the luminescence peak in a broad area spectrum was at 3.18 eV, but on some areas the peak was at 3.07 eV, the size of the area being about 1 μm. The variation of the cathodoluminescence spectra clearly indicates the presence of in-plane potential fluctuation in some InxGa1−xN samples, although the cathodoluminescence spectra of most of our quantum wells optimized for devices were found to be uniform at least within the spatial resolution limit.
Cathodoluminescence
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Cathodoluminescence
Microprobe
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Abstract Using colour cathodoluminescence, spectral analysis and cathodoluminescence mapping in scanning electron microscopy, some peculiarities of cathodoluminescence from the indentation centre and the rosette on MgO (100) crystals were investigated over a wide temperature range 80–1000 K. The sensitivity of indentation-induced defects to thermal environments has been revealed. An attempt has been made to explain the spatial distribution of cathodoluminescence from around indentations in terms of dislocation internal friction in solids.
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Abstract ChemInform is a weekly Abstracting Service, delivering concise information at a glance that was extracted from about 100 leading journals. To access a ChemInform Abstract of an article which was published elsewhere, please select a “Full Text” option. The original article is trackable via the “References” option.
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Solid state analogy cathodoluminescence is a new kind of cathodoluminescence happening not in vacuum but in solid state materials like SiO 2 with the properties of semiconductor.In our experiments,we selected the solid state material SiO 2 as acceleration layer.The accelerated electrons with excite directly the luminescence materials in adjacent luminescent layer just like cathodoluminescence.The difference from cathodoluminescence lies in that the energetic electrons are accelerated not in vacuum but in solids.We prepared three devices of thin film electroluminescence with different structures.The phosphors layer is PPV and the accelerating layer is SiO 2 in these structures.Solid state analyogy cathodoluminescence was found in these devices and the luminous dynamics of it was studies also.We prepared the existence of solid state analogy cathodoluminescence in our experiments.And the efficiency of devices with this kind of new structure has been improved compared with the of formal experiments without solid state analyogy cathodoluminescence.This new phenomenon of luminescence makes it possible to set up a new type of flat display technology.
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We present a systematic cathodoluminescence study yielding a clear correlation between the different growth conditions and the appearance and strength of the characteristic luminescence fingerprints of the individual point defects in AlN. In particular, the incorporation of oxygen and the formation of oxygen-related and probably silicon-related DX centers as well as the native Al and N vacancies are still a problem. The thermal activation of the deep defect centers is investigated by temperature dependent cathodoluminescence spectroscopy.
Cathodoluminescence
Deep-level transient spectroscopy
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Cathodoluminescence
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Spatio-time-resolved cathodoluminescence measurements were carried out on low threading dislocation density freestanding GaN substrates grown by hydride vapor phase epitaxy. High-resolution cathodoluminescence imaging allows for visualization of nonradiative recombination channels in the vicinity of accidentally formed inversion domain boundaries. Local cathodoluminescence lifetimes (τCL) for the near-band-edge (NBE) emission are shown to be sensitively position dependent. A linear relation between the equivalent internal quantum efficiency (ηinteq) and τCL for the NBE emission was observed at room temperature under a weak excitation condition, and spatially resolved excitation led to the observation of the highest ηinteq of 20% with τCL of 3.3 ns.
Cathodoluminescence
Wide-bandgap semiconductor
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