Parasitic capacitance removal of sub-100nm p-MOSFETs using capacitance–voltage measurements
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Parasitic capacitance
Differential capacitance
Metal gate
We propose dynamic threshold-voltage damascene metal gate MOSFET (DT-DMG-MOS) technology for very low voltage operation (under 0.7 V). In this technology the metal gate is formed by the damascene gate process and directly connected to the well region (Si-body). Therefore, the connection between gate electrode and silicon body can be more easily fabricated in the DT-DMG transistor than with conventional technologies. Furthermore, we found that low threshold voltage (about 0.15 V reduction for CMOS), high drive current, excellent subthreshold swing (about 60 mV/decade), and uniform electrical characteristics (great reduction of threshold voltage deviation) were obtained in the transistors with midgap work function metal gates (Al/TiN or W/TiN) and low supply voltage (0.7 V).
Copper interconnect
Metal gate
Subthreshold conduction
Overdrive voltage
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The relationship among the on-to-off current ratio, threshold voltage, and the gate metal work-function is investigated for a junctionless (JL) Gate-All-Around (GAA) MOSFET with a gate oxide film in which SiO2 and a high-k dielectric material are stacked. The JL structure works in the accumulation state, and the threshold voltage is defined as the gate voltage when the minimum potential in the channel becomes Fermi potential. The on-to-off current ratio Ion/Ioff is obtained by obtaining on-current Ion at the threshold voltage and off-current Ioff at the gate voltage of 0 V. As a result, if the channel doping concentration and silicon radius are increased to reduce the channel resistance, the on-to-off current ratio decreases along with the threshold voltage, but this problem can be solved through the increasing of the gate metal workfunction. In addition, even when the relative permittivity of the high-k dielectric is increased from 3.9 to 20, the gate metal work-function to maintain any on-to-off current ratio and threshold voltage is very slightly changed. Therefore it will be possible to improve the controllability of the gate by increasing the permittivity of the high-k dielectric without change in the work-function. The reduction of the channel resistance of the JL GAA MOSFET is possible with the stacked gate oxide while maintaining a reasonable on-to-off current ratio and threshold voltage by adjusting the gate metal work-function
Metal gate
Drain-induced barrier lowering
High-κ dielectric
Overdrive voltage
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We propose dynamic threshold-voltage damascene metal gate MOSFET (DT-DMG-MOS) technology for very low voltage operation (0.7 V). By using this technology, we found that low threshold voltage (about 0.15 V reduction for CMOS), high drive current, excellent subthreshold swing (about 60 mV/decade), and uniform electrical characteristics (great reduction of threshold voltage deviation) were obtained in the transistors with mid-gap work function metal gates (Al/TiN or W/TiN) and low supply voltage (0.7 V).
Copper interconnect
Metal gate
Overdrive voltage
Subthreshold conduction
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This paper presents a comprehensive full-scale three-dimensional simulation scaling study of the statistical threshold-voltage variability in bulk high- k /metal gate (HKMG) MOSFETs with gate lengths of 35, 25, 18, and 13 nm. Metal gate granularity (MGG) and corresponding workfunction-induced threshold-voltage variability have become important sources of statistical variability in bulk HKMG MOSFETs. It is found that the number of metal grains covering the gate plays an important role in determining the shape of the threshold-voltage distribution and the magnitude of the threshold-voltage variability in scaled devices in the presence of dominant variability sources (MGG, random discrete dopants, and line edge roughness). The placement of metal grains is found to also contribute to the total MGG variability. This paper presents the relative importance of MGG compared with other statistical variability sources. It is found that MGG can distort and even dominate the threshold-voltage statistical distribution when the metal grain size cannot be adequately controlled.
Metal gate
Granularity
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The Damascene metal gate transistors are found to exhibit characteristics superior to those of the conventional polysilicon gate transistors with respect to the threshold voltage deviation (/spl Delta/V/sub th/) and the subthreshold swing (S-factor) when the metal gate work function deviation (crystal orientation deviation) is suppressed by using the inorganic CVD technique. The mechanisms of the gate length dependence of /spl Delta/V/sub th/ and S-factor in the Damascene metal gate transistors can be explained by metal gate work function deviation in the channel region.
Copper interconnect
Metal gate
Subthreshold conduction
Subthreshold Swing
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Transistor mismatch data and analysis from state-of-the-art high-k/metal-gate (HKMG) technology are presented. By normalising mismatch data against oxide thickness (TINV), threshold voltage (VTH), and effective work function, direct comparison of VTH mismatch from various device types is made. It is quantitatively demonstrated that effective work function variation (EWFV) does not generate significant VTH variability in the present HKMG technology.
Metal gate
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Differential capacitance is derived based upon energy, charge or current considerations, and determined when it may go negative or positive. These alternative views of differential capacitances are analyzed, and the relationships between them are shown. Because of recent interest in obtaining negative capacitance for reducing the subthreshold voltage swing in field effect type of devices, using ferroelectric materials characterized by permittivity, these concepts are now of paramount interest to the research community. For completeness, differential capacitance is related to the static capacitance, and conditions when the differential capacitance may go negative in relation to the static capacitance are shown.
Differential capacitance
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This paper presents an interface circuit to measure various parameters in voltage mode by very small capacitance change in capacitive sensors. Differential capacitance comprises a capacitance-to-voltage conversion with low power, high speed and greater accuracy. Differential capacitance operation principle yields a high-precision measurement for capacitive sensors with increased signal-to-noise immunity. Double differential operating principle minimizes error caused by parasitic capacitance and stray capacitance of the sensor probes. Differential capacitance measurement comprises a capacitance-to-voltage conversion with low power, high speed and greater accuracy. Differential capacitance operation principle yields a high-precision measurement for capacitive sensors with increased signal-to-noise immunity. Double differential operating principle can also minimizes error caused by parasitic capacitance and stray capacitance of the sensor probes.
Parasitic capacitance
Differential capacitance
SIGNAL (programming language)
Capacitance probe
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Negative capacitance FET is a promising CMOS technology booster which may break the limit of 60mV/dec in subthreshold swing (SS) without degrading performance. We investigated the physical mechanism of negative capacitance in ferroelectric FET (FeFET) by considering the dynamics of the polarization in ferroelectric gate insulator: transient negative capacitance (TNC). Polarization switching and depolarization effect are essential to cause negative capacitance effect, that is, apparent surface potential amplification in deep subthreshold region with small depletion layer capacitance. Moreover, unique features of reverse DIBL and negative differential resistance (NDR) are also reproduced by the transient negative capacitance theory. Modeling charged defect in FeFET, hysteresis-free sub-60mV/dec SS can be realized. TNC theory is regarded as a comprehensive framework to model subthreshold characteristics of FeFET.
Differential capacitance
Subthreshold conduction
Hysteresis
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First,the structure and equivalent circuit of a MEMS capacitance micro-accelerometer are introduced in this paper.Then,the operational principles of switch-capacitance amplifier are described.Finally,the parallel equivalent resistor in normal switch-capacitance amplifier is replaced by the equivalent transresistance in which parasitic capacitance can be eliminated.And a capacitance-to-voltage signal converter circuit insensitive to the parasitic capacitances is designed,which can be used to detect the micro differential capacitance.
Differential capacitance
Parasitic capacitance
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