CH⋅⋅⋅π Interaction‐Modulated Solid‐State Packing and Carrier Mobility in Thienyl and Thieno[3,2‐b]Thienyl End‐Capped Distyrylarylene Derivatives
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Abstract:
Research on structure-property relationships in distyrylarylene derivatives is far behind their wide applications in optoelectronic devices due to the absence of crystal structure information. Herein, the single crystals of 4,4'-bis(2-thienylvinyl)biphenyl (1) and 4,4'-bis(2-thieno[3,2-b]thienylvinyl)biphenyl (2) were successfully grown by the vapor transport method. Both molecules adopt the typical herringbone packing motif. However, the intermolecular C-H⋅⋅⋅π interaction in compound 2 is much stronger than that in compound 1. The correlations of interchain interaction with film morphology, optical and electronic properties were studied. Compound 2 formed higher crystalline films with (001) and (111) orientations. The organic field-effect transistor properties of both materials were investigated. Compound 2 showed better performance with a hole mobility higher than 0.01 cm(2) V(-1) s(-1) and an on/off current ratio over 10(6) . These results reveal that the intensity of C-H⋅⋅⋅π interactions can exert dramatic influences on the optical and electronic properties of distyrylarylene-based materials.Keywords:
Biphenyl
Electron Mobility
Intermolecular interaction
Iodine adds across both triple bonds of 4,4'-bis-(prop-2-yn--yl-oxy)biphenyl, yielding the 4,4'-bis-(2,3-diiodo-all-yloxy)biphenyl title compound, C(18)H(14)I(4)O(2); the 2,3-diiodo-ally-oxy substituents have the I atoms in an E configuration. In the biphenyl portion of the mol-ecule, the aromatic rings are inclined by 37.8 (2)°.
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Abstract Continuing investigations described in a preceding paper 1 ) N‐alkylated biphenyl‐4 and 4‐ cyclo hexyl phenyl‐substituted amines have been prepared and tested for pharmacological activities. N‐derivatives of (biphenyl‐4)‐methylamine, β‐(biphenyl‐4)‐ethylamine, 4‐(2′‐methoxy biphenyl)‐ethyl‐amine, 4‐( cyclo hexyl phenyl)‐methylamine and β‐4‐( cyclo hexyl phenyl)‐ethylamine are described.
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4,4′-bis(aminomethyl) biphenyl hydrochloride was prepared from biphenyl by aminomethylation and hydrolysis.The yield of 4,4′-bis(chloromethyl) biphenyl hydrochloride based on biphenyl could reach as high as 80.7% under the optimum reaction conditions.At the same time,three kinds of derivatives,i.e.4,4′-biphenyldicarboxaldehyde,4,4′-bis(hydroxymethyl)biphenyl and 4,4′-bis(chloromethyl) biphenyl were prepared from it.
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Biphenyl-3, 3', 5, 5'-d/sub 4/ has been prepared from anilin hydrobromide by a 4-step synthesis. Biphenyl-d/sub 10/ has been prepared from benzene by a 3-step synthesis. The two deuterated biphenyls were 98.0 and 95.1 mole perceat pure, respectively; the impurities consisted of biphenyls with a lower deuterium coateat. (auth)
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Terphenyl
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A series of 4,4'-bis(alkyloxy/phenoxy methyl biphenyl)were synthesized,using 4,4'-bis(chloromethyl)-biphenyl(BCMB) as raw material by Williamson ether synthesis methods.The synthesis process of 4,4'-bis(methoxymethyl) biphenyl,4,4'-bis(butoxymethyl) biphenyl and 4,4'-bis(phenoxymethyl)biphenyl was improved in reaction time and yield.On the basis,a series of new compounds were prepared.
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Abstract Many mesomorphic compounds undergo decomposition on repeated heating. In the search for compounds which are appreciably stable to heating cycles and which display mesophases over a wide range of temperatures, we have prepared some biphenyl-4-trans-p-n-alkoxycinnamates and have investigated their mesomorphic properties. Table 1 shows the transition temperatures for the compounds prepared in this work.
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Diethyl ether
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Axial Chirality
Polychlorinated biphenyl
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The carrier effective mobility μeff in the inversion layer for both n- and p-channel metal-oxide-semiconductor field-effect transistors with ultrathin gate dielectrics prepared by rapid thermal reoxidation (RTO) of rapid thermal nitrided (RTN) SiO2 has been studied. It is found that although RTN/RTO degraded the low-field μeff, it improved significantly the electron μeff under high normal field compared to control SiO2. The effect of RTN/RTO on the hole effective mobility has also been examined and found to be quite different than on the electron effective mobility. A physical mechanism is discussed to account for the observation.
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