Properties of the Nb Thin-Film Nanobridges Prepared by Nanometer Fabrication Process
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We describe the properties of Nb thin-film nanobridges fabricated by means of our original nanometer-scale process. Our original nanofabrication techniques include the synthesis of a new electron beam (EB) resist and the use of CBrF 3 as an etchant for reactive ion etching (RIE). Fabricated nanobridges have high sensitivity of radiation and high reliability. It is observed that the properties of nanobridges can be changed by varying the bridge length and its thickness. We have also fabricated the series arrays and observed that they operate coherently.Keywords:
Nanometre
Abstract This paper deals with the performance of the AR-N7520 ( Allresist ) negative electron beam resist (EB resist) which was selected as an etch mask for the fabrication of gratings on GaAs substrates. The developed resist sidewall shape is crucial for this purpose. The required near-to-vertical sidewall shape can be achieved by optimizing the electron beam lithography (EBL) process based on experimental investigations and computer simulations. The sidewall shape dependence on the EBL parameters (exposure dose, resist pattern, etc.) and the proximity effect are studied.
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Abstract In this work, four types of negative electron beam resists are investigated. Electron beam lithography (EBL) experiments were conducted using EBL system ZBA23 ( Raith ) with the variable-shaped electron beam cross-section at 40 keV electron energy. Important electron beam resist characteristics such as sensitivity, dissolution rate, aspect ratio and sidewall developed profiles in the chemically amplified resist (CAR) SU-8 2000, non-CARs ma-N 2410 and ARN-7520, and inorganic negative resist HSQ XR-1514 are studied and compared. This study was motivated by the selection of a suitable resist for practical use such as large area gratings fabrication for optoelectronics.
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Hydrogen silsesquioxane
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Abstract The study reveals the influence of the electron-beam lithography parameters (such as the exposure dose, resist thickness, depth) on the resist profile shape in the case of the PMMA (polymethyl-methacrylate) positive resist. The experiments are performed using an Elphy Quantum (Raith) e-beam lithography control system installed on an Inspect F50 (FEI) scanning electron microscope with a field emission cathode and a Gaussian intensity distribution. Profiles developed in the PMMA using the MIBK:IPA 1:3 developer and simulation results based on measurements along the resist profile depth for the case of 30-keV electron energy are presented and discussed. The results contribute to the knowledge on electron scattering in the resist/substrate in electron-beam lithography and assist in the development and approval of simulation tools for prediction and control of resist profiles in thick PMMA layers for lift-off nanopatterning.
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Next-generation lithography
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In order to meet electron beam lithography′s(EBL) requirement for high resolution resist,the related techniques of taking Calixarene ramification as EBL resist in such processes as resist solution preparation,exposure and development were studied.JEOL JBX-5000LS electron beam lithography system was used in the experiment.The results show that under the conditions of 50 keV electron energy and 50 pA beam current,it is easy for Calixarene to form the figure of 50 nm single line or 50 nm lines and space.The advantages and disadvantages of Calixarene EBL resist were summarized through comparison with the common resists and their causes were also analyzed.As a new kind of EBL resist,Calixarene is expected to be used successfully in the fabrication of nano-structures,nano-scale devices and circuits.
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Experimental and simulation results of the proximity effects study for the case of the high-resolution electron beam resist Hydrogen Silsesquioxane (HSQ) on TiO 2 thin film at 40 keV electron energy are presented and discussed. The dependence of resist pillar size and shape on the exposure dose, resist thickness and resist patterns configuration is studied for thick HSQ. The influence of the proximity effects on the precision and limitations of electron beam lithography is discussed.
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A new fabrication process of T-shaped gates has been developed using a deep-UV/electron-beam/deep-UV (DUV/EB/DUV) tri-layer resist system and electron-beam lithography for the first time. The simple process accomplished a submicron T-shaped gate by a single exposure and a single development step. The narrow/wide/narrow opening of the DUV/EB/DUV resist structure can be accurately controlled by the e-beam dosage and the development conditions. Differences in the sensitivities of the DUV resist and the EB resist were investigated. Due to the lower sensitivity of the adopted DUV resist to the electron beam, the smaller opening of the DUV resist layer was obtained. The higher sensitivity of the EB resist resulted in a wider opening in the middle resist layer. A 0.15-µm-gate-length T-shaped gate can be easily formed by the short-process-time and low-production-cost hybrid DUV/EB/DUV resist approach.
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Hydrogen silsesquioxane
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A positive tone chemically amplified (CA) resist, Shipley UVIIITM, has been investigated for use in the fabrication of scattering electron-beam projection lithography (EPL) masks. Shipley UVIII is a DUV resist that also functions as a high resolution (sub 75 nm) e-beam resist with sensitivities of 12 - 30 (mu) C/cm2 at 75 keV depending upon the bake parameters, and is currently used in the manufacture of advanced x-ray masks with 90 nm feature sizes. This paper discusses the issues associated with the implementation of CARs in EPL mask processing, including the thermal variations and mechanical distortions which can cause nonuniformities during resist processing. The performance of the resist was evaluated based on critical dimension (CD) uniformity across the mask and within individual membranes, image placement (IP) performance within an individual membrane, and image quality. CD uniformity of less than 15 nm 3 (sigma) has been achieved across the mask (approximately 50 X 50 mm area) and less than 10 nm 3 (sigma) has been achieved intramembrane (1.1 X 12.1 mm area), for 400 nm nominal feature sizes in resist. Pattern transfer etch processes for a TaSi scatter layer have also been developed.
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