Resist Thickness Effect on Acid Concentration Generated in Poly(4-hydroxystyrene) Film upon Exposure to 75 keV Electron Beam
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Abstract:
The thickness dependence of resist performance has been investigated. It has been reported that principal properties such as resist sensitivity show strong dependence on resist film thickness. In current standard resist called chemically amplified resist, acids play the most important role in resist pattern formation. However, the dependence of acid concentration on resist thickness has not been reported. Better understanding of acid related issues is important for the development of high performance resists and the precise simulation of resist pattern profiles. In this work, the acid density in poly(4-hydroxystyrene), which is a widely-used backbone polymer for chemically amplified resists, was measured quantitatively by spectroscopic experiments. The average acid concentration nonlinearly increased by 14% with the increase of resist thickness from 65 to 4000 nm.Keywords:
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A novel double‐layer resist method was presented in this work to decrease the negative photoresist scum. Positive photoresist was chosen as the bottom layer resist and negative photoresist as the top layer resist. This work studied the effect of viscosity and thickness of bottom layer resist on the mean number of scum. The experiment shows that the low viscosity positive photoresist AZ703, with the spin speed of 3000 r/min and the thickness of 1.10 um, had prominent effect on the removal of photoresist. To minimise the area of the top layer contact with substrate and further reduce the scum, 8 µm was selected as the optimal retracting distance d of the bottom layer resist.
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Abstract This paper deals with the performance of the AR-N7520 ( Allresist ) negative electron beam resist (EB resist) which was selected as an etch mask for the fabrication of gratings on GaAs substrates. The developed resist sidewall shape is crucial for this purpose. The required near-to-vertical sidewall shape can be achieved by optimizing the electron beam lithography (EBL) process based on experimental investigations and computer simulations. The sidewall shape dependence on the EBL parameters (exposure dose, resist pattern, etc.) and the proximity effect are studied.
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Next-generation lithography
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Recent progress in semiconductor devices has been remarkable. With the appearance of VLSI, production of devices has shifted from the 64K bit to the 256K bit. Reductions in size on the microfabrication have been achieved, from 2.5 μm for the 64K bit to 2.0 μm for the 256K bit. For 1 mega bit devices, further reduction to 1 μm has approached the limit for photoresist fabrication. Submicron fabrication will require special processing techniques.The following is a brief explanation of high resolution resists, including photoresist, Deep UV resist, electron beam resist, X-ray resist, and plasma-developable resist.
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Semiconductor device fabrication
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Experimental and simulation results of the proximity effects study for the case of the high-resolution electron beam resist Hydrogen Silsesquioxane (HSQ) on TiO 2 thin film at 40 keV electron energy are presented and discussed. The dependence of resist pillar size and shape on the exposure dose, resist thickness and resist patterns configuration is studied for thick HSQ. The influence of the proximity effects on the precision and limitations of electron beam lithography is discussed.
Hydrogen silsesquioxane
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Abstract The accuracy of profile simulation calculations depends heavily on the accuracy of the parameters used. In particular, the development parameters, which represent the development characteristics (profile and sensitivity) of the resist, have a significant effect on profile simulation accuracy. However, as yet there have been almost no studies into methods used to calculate the development parameters for electron beam lithography, nor have there been comparisons of simulation results using these development parameters with observed resist profiles. In light of this, the authors have developed a system for the measurement of development parameters for use in simulations of electron beam lithography, and have undertaken study into the methods used to calculate such development parameters. In addition, the authors have also attempted to compare simulation results with observed resist profiles. Specifically, a diazanaphthoquinone–novolac resin positive‐type electron beam resist and a chemically amplified positive‐type electron beam resist were used, to which the Fujino development rate equation and the Mack development rate equation were applied. Trial calculations of the development parameters were performed, and the parameters thus obtained were input into a ProBEAM/3D electron beam lithography simulator. The electron beam resist profiles were simulated and compared with SEM images of actual resist samples. From the results it was found that both the Fujino and Mack development rate equations accurately reproduce resist behavior for the novolac positive‐type electron beam resist, whereas the Mack development rate equation was more accurate than the Fujino equation for the chemically amplified positive‐type electron beam resist. © 2001 Scripta Technica, Electron Comm Jpn Pt 2, 84(4): 16–25, 2001
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A commercially available positive photoresist, Polychrome 129 SF, has been evaluated as both a positive electron beam resist and photoresist. The photoresist sensitivity, measured uniquely for a given developer based upon image dimensional control, is determined to be less than that of AZ 1350, under as nearly equivalent conditions as possible. The E-beam resist sensitivity is lower than that of PMMA reference, but the resist possesses good resolution. Near vertical edge wall profiles are obtained for 1-micrometer lines, but no undercutting is ever achieved regardless of electron charge density magnitude. The resist is capable of submicron line and space E-beam resolution, and 0.50-0.75 micrometer wide isolated line patterns can be routinely achieved.
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Micrometer
Polychrome
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