Electron-phonon interaction in embedded semiconductor nanostructures
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Abstract:
The modification of acoustic phonons in semiconductor nanostructures embedded in a host crystal is investigated including corrections due to strain within continuum elasticity theory. Effective elastic constants are calculated employing ab initio density functional theory. For a spherical $\mathrm{InAs}$ quantum dot embedded in $\mathrm{GaAs}$ as barrier material, the electron-phonon coupling is calculated. Its strength is shown to be suppressed compared to the assumption of bulk phonons.Keywords:
Semiconductor nanostructures
Elasticity
Coupling constant
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Semiconductor nanostructures
Transfer-matrix method (optics)
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