Erbium-based plasmonic-assisted vertical emitter
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Erbium-based plasmonic-assisted vertical emitters at telecommunication wavelengths have been investigated. We show that net gain and array of lasers are achievable.Keywords:
Erbium
In this paper, the race-track-shaped field emitter structures with small spacing between the emitter and the gate are proposed. The iterative finite difference in the coarse and fine meshing areas and the fourth order Runge-Kutta method are used to calculate the electric field and the electron trajectories in the race-track-shaped field emitter structures. Numerical results show that the turn-on voltages of these structures with 0.25 /spl mu/m and 0.1 /spl mu/m spacing between the emitter and the gate are 100 V and 60 V respectively.
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Bipolar transistors with multiple emitters are used to achieve high currents and the maximum utilization of emitter area. The multi-emitter SiGe HBTs fabricated in a modified Si BiCMOS technology is studied in this paper. The heating and thermal coupling between the emitters of a multiple emitter SiGe HBT were measured along the emitter length. This measurement provides useful information about the temperature increases in multi-emitter devices and the emitter-emitter thermal coupling. Temperature dependence of the normalized emitter currents and power dependence of the monitored emitter currents were studied through experiments.
Heterojunction bipolar transistor
Heterostructure-emitter bipolar transistor
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The paper describes some of the problems associated with emitter location calculations. This aspect is the most important part of the series of tasks in the electronic recognition systems. The basic tasks include: detection of emission of electromagnetic signals, tracking (determining the direction of emitter sources), signal analysis in order to classify different emitter types and the identification of the sources of emission of the same type. The paper presents a brief description of the main methods of emitter localization and the basic mathematical formulae for calculating their location. The errors' estimation has been made to determine the emitter location for three different methods and different scenarios of emitters and direction finding (DF) sensors deployment in the electromagnetic environment. The emitter has been established using a special computer program. On the basis of extensive numerical calculations, the evaluation of precise emitter location in the recognition systems for different configuration alignment of bearing devices and emitter was conducted. The calculations which have been made based on the simulated data for different methods of location are presented in the figures and respective tables. The obtained results demonstrate that calculation of the precise emitter location depends on: the number of DF sensors, the distances between emitter and DF sensors, their mutual location in the reconnaissance area and bearing errors. The precise emitter location varies depending on the number of obtained bearings. The higher the number of bearings, the better the accuracy of calculated emitter location in spite of relatively high bearing errors for each DF sensor.
SIGNAL (programming language)
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The emitter resistance of polysilicon emitter bipolar transistors with an emitter area ranging from 0.6*2.4 mu m/sup 2/ to 3.4*10.4 mu m/sup 2/ has been characterized as a function of process parameters. The emitter polysilicon layer resistance plays a dominant role in determining the total emitter resistance of a small emitter area of 0.7*2.5 mu m/sup 2/, when the emitter diffusion is performed at 1000 degrees C. When the emitter diffusion temperature is reduced to 950 degrees C or below, the interfacial resistance between the n/sup +/-polysilicon and the n/sup +/-silicon layers starts to show a noticeable contribution to the total emitter resistance. An in situ emitter surface cleaning with HCl gas at 600 degrees C shows no effect on the emitter resistance, but results in a current gain reduction and an increase in the emitter saturation current. The emitter resistance increases almost two times when the emitter area is scaled from 1.2*3.0 mu m/sup 2/ to 0.7*2.5 mu m/sup 2/, while the cutoff frequency increases less that 6% and the ECL-gate delay time decreases less than 10%. Based on a SPICE simulation, an emitter resistance larger than 100 Omega starts to show a significant increase in ECL-gate delay time. It is concluded that it is better to maintain the emitter area as large as possible within an acceptable range of circuit design criteria to avoid the emitter resistance constraint for submicrometer double-polysilicon bipolar devices.< >
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An in-situ doped polysilicon emitter process for very shallow and narrow emitter formation and minimum emitter resistance is presented. An in-situ doped film was imbedded between two undoped poly spacer layers as a buried diffusion source (BDS) to reduce the emitter resistance and to form a high-quality poly/monosilicon interface. Transistors with an emitter area of 0.25 mu m*0.25 mu m and with nearly ideal I-V characteristics were fabricated. A cutoff frequency of 53 GHz and a minimum ECL gate delay of 26 ps were achieved using BDS poly emitter transistors with an emitter area of 0.35 mu m*4.0 mu m.< >
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A gas-filled thermionic converter is provided with a collector and an emitter having a main emitter region and an auxiliary emitter region in electrical contact with the main emitter region. The main emitter region is so positioned with respect to the collector that a main gap is formed therebetween and the auxiliary emitter region is so positioned with respect to the collector that an auxiliary gap is formed therebetween partially separated from the main gap with access allowed between the gaps to allow ionizable gas in each gap to migrate therebetween. With heat applied to the emitter the work function of the auxiliary emitter region is sufficiently greater than the work function of the collector so that an ignited discharge occurs in the auxiliary gap and the work function of the main emitter region is so related to the work function of the collector that an unignited discharge occurs in the main gap sustained by the ions generated in the auxiliary gap. A current flows through a load coupled across the emitter and collector due to the unignited discharge in the main gap. 7 claims, 5 figures.
Thermionic emission
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Abstract Drip irrigation systems have become a major part of developing agriculture in Egypt and the aim of this research was to obtain the best performance from irrigation systems management using locally modified and original emitters. The experiments were carried out at the National Irrigation Laboratory of the Agricultural Engineering Research Institute. The emitters were tested and calibrated under different operating pressures (0.50, 0.75, 1 and 1.25 bar) to determine emitter flow rates and emitter emission uniformity (EU) and manufacturing variation coefficient (CV). The original emitter performance was determined using the relationship between emitter flow rate (2 lh−1) and operating pressure, with data indicating that the EU was 98.5%, at a CV of 2.3% and actual flow rate was 1.8 lh−1 for the original emitter. The EU was 93.8% with a CV of 5.2% and actual flow rate of 2.02 lh−1 for the modified emitter. For original emitter performance at 4 lh−1, data indicated that the EU was 96%, with a CV of 4.8% and actual flow rate of 3.78 lh−1. The EU for the modified emitter was 95% with a CV of 2.7% and actual flow rate of 4.5 lh−1. The emitter exponent values were 0.41 to 0.44 for modified and 0.37 to 0.38 for original emitters.
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做 Y2O3 的瞬间第二等的 emitters 被液体液体分别地做并且稳固固体的做准备。而由稳固固体的做准备了那有大谷物尺寸，扫描观察结果的 back-scattered 显示做的液体液体准备的 emitter 有好微观结构。有做的液体液体准备的小谷物尺寸的做 Y2O3 的瞬间 emitter 展出高排放性质，即，第二等的电子收益能到 5.24，由稳固固体的做准备了的大约 1.7 次。而且，做 Y2O3 的瞬间 emitter 在这 emitter 由于主要电子的最大的穿入深度和第二等的电子的逃跑深度在做 La2O3 的瞬间，做 Y2O3 的瞬间，做 Gd2O3 的瞬间和做 Ce2O3 的瞬间 emitters 之中展出最好的排放表演。有小谷物尺寸的 emitter 的第二等的排放能被思考排放模型和传播排放模型解释，而仅仅传播排放与大谷物尺寸在 emitter 存在。
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Axial symmetry
Variation (astronomy)
Ellipsoid
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Experimental Study on Clogging and the Capability of Sediment Transportation about Labyrinth Emitter
Aiming at two types of muddy water with the diameters of 0.25~0.224 mm and 0.224~0.18 mm sediment particle,This paper tests the instance of physical clogging and capability of sediment transportation about the emitter under the circumstance of three types of emitter inlet pressure and four types of different concentrate muddy water and several velocity in capillary.The experimental results show that: 1) the diameter of the sediment particle is the primary factor which leads to clog in emitter and the second one is the emitter inlet pressure.The bigger the diameter of the sediment particle and the higher the emitter inlet pressure,the higher the probability that emitter clogged;2) the clogging of labyrinth emitter is both abrupt and gradual and the sediment deposition always exists in the whole cross section of the labyrinth path;3) the capability of sediment transportation of emitter improved along with the muddy water concentration increased and can export sediment in emitter when the diameter of the particle less than 1/5 that of the emitter path and discharge in labyrinth emitter is unchangeable in test time,on the other hand,the capability of sediment transportation of emitter becomes stronger along with the aggrandizement of the discharge when muddy water concentration is stated.
Clogging
Particle (ecology)
Deposition
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