GaAs/AlGaAs grating surface-emitting diode lasers on Si substrates
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A monolithic grating surface-emitting, GaAs/AlGaAs, separate-confinement-heterostructure, single-quantum-well diode laser has been fabricated on a Si substrate using a single-step metalorganic chemical vapour deposition process. An output power of 30 mW has been obtained under pulsed operation with a peak emission wavelength of 885 nm.Keywords:
Laser diode
Carbon fibers
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It is well known that a semiconductor laser diode with optical feedback can show both stable (CW) and unstable (chaotic) modes of behavior. The optical output is governed by three different parameters, namely the injection current, feedback strength and optical feedback delay time. In this work, we present a detailed numerical study of the route to chaos as the feedback strength is varied for a laser diode having arbitrary injection current and external cavity length. The results are presented as a 3D phase diagram where the x-and y-axes correspond to the injection current and optical feedback delay time and the z-axis to feedback strength. This allows a global study of the route to chaos and extends the 2D results obtained by arbitrarily fixing one parameter and allowing the two other to vary.
Optical chaos
Laser diode
Feedback loop
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This chapter contains sections titled: Gallium Arsenide Technology and ESD Gallium Arsenide Energy-to-Failure and Power-to-Failure Gallium Arsenide ESD Failures in Active and Passive Elements Gallium Arsenide HBT Devices and ESD Gallium Arsenide HBT-Based Passive Elements Gallium Arsenide Technology Table of Failure Mechanisms Indium Gallium Arsenide and ESD Indium Phosphide (InP) and ESD Summary and Closing Comments Problems References
Indium arsenide
Heterojunction bipolar transistor
Arsenide
Indium gallium arsenide
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The characteristics of metalorganic vapor-phase epitaxy (MOVPE)-grown GaN layers have been compared with the chemical features of the gaseous phase during growth. The chemical features were evaluated by growth simulation. Two- and three-flow methods were used for GaN MOVPE. It was found both by growth and by simulation that the two-flow is superior to the three-flow method as regards uniformity and quality of the GaN layers.
Vapor phase
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Semiconductor laser diodes can be altered to behave chaotically by imposing some sorts of nonlinearity such as an external optical injection. The operating parameters that control this behavior are the injection current, the injection level and the angular frequency detuning between the laser diode and the optical injected signal. In this work, we numerically study the effect of the variation of these operating parameters on the route to chaos. The results are illustrated in 3D phase diagram where the three axes (x.y.z) are the injection current, the frequency detuning and the injection level, respectively. Therefore, this phase diagram presents a map that can be used to select the required output of a semiconductor laser diode subjected to an external optical injection according to the required application.
Laser diode
SIGNAL (programming language)
Semiconductor optical gain
Injection locking
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Deposition
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Background carbon (C) impurity incorporation in metalorganic chemical vapor deposition (MOCVD) grown gallium nitride (GaN) represents one of the major issues in further improving GaN vertical power device performance. This work presents a laser-assisted MOCVD (LA-MOCVD) technique to address the high-C issue in MOCVD homoepitaxial GaN under different growth rate (Rg) regimes and studies the correlations between [C] and Rg. [C] in LA-MOCVD GaN is reduced by 50%–90% as compared to the conventional MOCVD GaN for a wide growth rate range between 1 and 16 μm/h. A mass-transport based model is developed to understand the C incorporation at different Rg regimes. The results obtained from the developed model are in good agreement with experimental data. The model further reveals that LA-MOCVD effectively suppresses C incorporation by reducing the active C species in the gas phase. Moreover, high step velocity in step flow growth mode can facilitate C incorporation at fast Rg, exhibiting steeper C increase. The theoretical model indicates that [C] can be suppressed below 1016 cm−3 with a fast growth rate (Rg) of 10 μm/h by utilizing higher power LA-MOCVD and freestanding GaN substrates with larger off-cut angles.
Carbon fibers
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CuPt-type atomic ordering in InAsySb1-y layers grown by molecular beam epitaxy (MBE) and metal organic vapour phase epitaxy (MOVPE) on (001) substrates was investigated using TED and TEM. The degree of ordering was greater and occurred at higher temperatures, and the ordered domains were larger, in the MOVPE layers compared with the MBE layers. AFM showed surface ridges along the [110] direction for the MOVPE layers and along the [ ] direction for the M-BE layers. We suggest mechanisms to explain why the differences in ordering for the MOVPE and MBE layers occur.
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In this work we present circuit models of semiconductor laser diode arrays. The models are based on the two lateral coupled laser rate equations. The circuit obtained and the small signal analysis results are discussed.
Laser diode
SIGNAL (programming language)
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In this work growth of cubic GaN in the selective area (SA) MOVPE process is
simulated. The simulations are restricted to small pattern SA MOVPE growth.
In this case the traditional MOVPE growth a ...
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