A diagnostic pattern for GaAs FET material development and process monitoring
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A compact diagnostic pattern containing test structures for the measurement of key materials and device processing parameters is presented. The test devices have been used to study the correlation between the meterial and processing parameters and GaAs FET performance. This diagnostic tool has proven to be an invaluable aid in the development of ion-implanted FET's.This text presents the basic concept of Synchronized Multimedia Integration Language(SMIL). A few key techniques for the medium combination, time line programming and broadcast layout set-up, in the integration process of streaming multimedia, are introduced. The relevant problem and strategy to successfully accomplish these key techniques are pointed out, and related examples are given out. The medium broadcasting with continuously smooth and good visual effect is achieved.
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Scalability is a key concern for SMP based architecture in the current context. NUMA based architecture design seems to be a promising hope addressing this key concern. At the same time CC-NUMA based design architecture demands a deeper understanding and open vistas for key areas of improvement. Our proposed research tries to investigate, evolve and analyze one of the key design issues for NUMA machine and proposes an innovative solution to address this key design issue under investigation in the current phase of our work.
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Abstract Selective angle electroluminescence of violet light with a peak wavelength of 405 nm from light‐emitting diodes based on nanostructured p‐GaN/ZnO heterojunctions is reported. The fabrication of well‐aligned nanobottles with excellent crystalline quality is achieved by chemical vapor deposition at temperatures as low as 450 °C with a specially designed upside‐down arrangement of substrate configuration. Selective angle light sources are essential in our daily life. With the geometry of the nanobottle waveguides, it is very easy to realize such a practical application. Therefore, the discovery reported here should be very useful for the future development of many unique optoelectronic devices.
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HNC Question Answering system(HNCQA)is one of the most brand-new question answering processing pattern. Compared with the traditional QA system, HNCQA penetrate into the language concept space to resolve the understanding problem. Processing in this way can reduce the word sense ambiguity as drastically as possible. This paper will introduce the HNCQA architecture on the whole and present some key algorithms which server the HNCQA in some key positions. The experiment,which we have made, indicates that the system based on the algorithms we designed and provided with a middle scale common-sense knowledge database can get good performance.
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Wide-bandgap semiconductor
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Data center
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Бұл зерттеужұмысындaКaно моделітурaлы жәнеоғaн қaтыстытолықмәліметберілгенжәнеуниверситетстуденттерінебaғыттaлғaн қолдaнбaлы (кейстік)зерттеужүргізілген.АхметЯссaуи университетініңстуденттеріүшін Кaно моделіқолдaнылғaн, олaрдың жоғaры білімберусaпaсынa қоятынмaңыздытaлaптaры, яғнисaпaлық қaжеттіліктері,олaрдың мaңыздылығытурaлы жәнесaпaлық қaжеттіліктерінеқaтыстыөз университетінқaлaй бaғaлaйтындығытурaлы сұрaқтaр қойылғaн. Осы зерттеудіңмaқсaты АхметЯсaуи университетіндетуризмменеджментіжәнеқaржы бaкaлaвриaт бaғдaрлaмaлaрыныңсaпaсынa қaтыстыстуденттердіңқaжеттіліктерінaнықтaу, студенттердіңқaнaғaттaну, қaнaғaттaнбaу дәрежелерінбелгілеу,білімберусaпaсын aнықтaу мен жетілдіружолдaрын тaлдaу болыптaбылaды. Осы мaқсaтқaжетуүшін, ең aлдыменКaно сaуaлнaмaсы түзіліп,116 студенткеқолдaнылдыжәнебілімберугежәнеоның сaпaсынa қaтыстыстуденттердіңтaлaптaры мен қaжеттіліктерітоптықжұмыстaрaрқылыaнықтaлды. Екіншіден,бұл aнықтaлғaн тaлaптaр мен қaжеттіліктерКaно бaғaлaу кестесіменжіктелді.Осылaйшa, сaпa тaлaптaры төрт сaнaтқa бөлінді:болуытиіс, бір өлшемді,тaртымдыжәнебейтaрaп.Соңындa,қaнaғaттaну мен қaнaғaттaнбaудың мәндеріесептелдіжәнестуденттердіңқaнaғaттaну мен қaнaғaттaнбaу деңгейлерінжоғaрылaту мен төмендетудеосытaлaптaр мен қaжеттіліктердіңрөліaйқын aнықтaлды.Түйінсөздер:сaпa, сaпaлық қaжеттіліктер,білімберусaпaсы, Кaно моделі.
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Herein, we reported the effects of the geometric morphology of the sidewall on the extraction efficiency of GaN-based light-emitting diodes (LEDs). We performed numerical analysis based on the ray-tracing method. We found that the extraction efficiency of the LEDs increased with the texturing of the sidewall. The light output intensity of the LEDs (at an injection current of 100 mA) increased by 13.8% after sidewall texturing. These results confirmed that the geometric morphology of the sidewall plays an important role in improving the extraction efficiency of LEDs.
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Using single-walled carbon nanotubes (SWCNTs) as nanomasks on an undoped GaN template, a significant biaxial stress relaxation was achieved in the subsequently-grown Si-doped n-GaN layer. Enhanced near band edge (NBE) emission intensity, similar free carrier concentrations, and the reduced peak width of the asymmetric (102) crystallographic plane all confirmed the suppression of threading dislocations due to the nanoepitaxial growth process. Temperature-dependent photoluminescence (PL) revealed improved internal quantum efficiency (IQE) of InGaN/GaN multi-quantum wells (MQWs) grown on this n-GaN layer. Furthermore, enhanced light output power and a remarkable reduction in efficiency droop were observed for the blue light-emitting diodes (LEDs), especially at higher injection currents. Our results emphasize the strong potential for SWCNTs as nanomasks in the heteroepitaxy of GaN-based devices without the exploitation of complicated lithography or etching processes.
Quantum Efficiency
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