Effect of Residual Damage on Carrier Transport Properties in a 4H-SiC Double Implanted Bipolar Junction Transistor

We studied bipolar junction transistors. We will see that the bipolar junction transistor, often referred to by its short name, transistor, actually functions as a current-controlled current source. We will also see that in the current generation of bipolar junction transistors, both majority and minority carriers are involved. For this reason, they gave this name to this type of transistor. In order to get enough information about this part, in the first two parts we will examine the construction and working method of the transistor. After that, we dedicate sections to how the transistor is placed in different combinations and the characteristics of the transistor in each combination.

Heterostructure-emitter bipolar transistor

Multiple-emitter transistor

Bipolar transistor biasing

Static induction transistor

10.9734/psij/2022/v26i11-12772

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Porous SiC Ceramics with Multiple Pore Structure Fabricated via Gelcasting and Solid State Sintering

Journal of Inorganic Materials (2016)

Feng Wang Zhao-Fen Gao Xu Jiaqiang Yu‐Ping Zeng

Porous SiC ceramics with multiple pore structures were fabricated via gelcasting and solid state sintering.A novel gelling agent of Isobam was applied and PMMA was used as both foam stabilizer and pore forming agent.The mechanical properties of porous SiC ceramics were investigated as functions of PMMA content, rotating speed of ball mill, and sintering temperature.With PMMA content increasing from 5wt% to 20wt%, the foaming effect was inhibited while the stability of bubbles increased.When the rotating speed was 220 r/min, the open porosities of the as-prepared SiC ceramics sintered at 2100 varied ℃ from 51.5% to 72.8%, and compressive strength varied from 7.9 to 48.2 MPa.With the rotating speed increasing from 220 to 280 r/min, the foaming effect was aggravated and the porosities of SiC ceramics sintered at 2100 increased.℃ While the sintering temperature increasing from 2050 to 2150 , ℃ the SiC ceramics prepared with PMMA content of 20wt% at rotating speed of 220 r/min decreased in the open porosities while increased in compressive strength.

10.15541/jim20150390

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Microstructure and mechanical properties of multiwalled carbon nanotube toughened spark plasma sintered ZrB₂composites

Advances in Applied Ceramics Structural Functional and Bioceramics (2016)

Jia Lin Yu Huang H. Zhang Yihang Yang Y. Hong

ZrB2 based composites containing 10 vol.-% carbon nanotubes (CNTs) are synthesised by spark plasma sintering at temperatures ranging from 1600 to 18008C and at an applied pressure of 25 MPa. The effects of sintering temperature on densification behaviour, microstructural evolutions and mechanical properties are presented. Results indicate that ZrB2-CNT composites fabricated at 16508C have the optimal combination of dense microstructure and properties. The fracture toughness is sensitive to the temperature change and reaches 7.2 MPa m1/2 for the CNT toughened ZrB2 ceramics, which is higher than the measured result for monolithic ZrB2 (3.3 MPa m1/2). The crack deflection and CNT pullout are the dominant toughening mechanisms.

Spark Plasma Sintering

Toughening

10.1179/1743676115y.0000000068

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Fabrication of (TiB/Ti)-TiAl composites with a controlled laminated architecture and enhanced mechanical properties

Journal of Material Science and Technology (2020)

Hao Ding Xiping Cui Naonao Gao Yuan Sun Yuanyuan Zhang

Spark Plasma Sintering

10.1016/j.jmst.2020.06.011

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Citations (57)