Physical degradation of a-Si films on thermal treatment: a scanning electron microscope study
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Glow discharge
Nanocrystalline silicon
Nanocrystalline silicon
Metastability
Glow discharge
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Different structures of high-speed infrared sensors based on amorphous silicon germanium and amorphous silicon heterostructures have been successfully developed on crystalline silicon substrates. Experimental results of these developed structures exhibit a superior device performance to that of a traditional p-i-n amorphous photosensor prepared on a glass substrate, especially significant improvements in the rise-time from 465 to 195 /spl mu/s, and the dark-current from 50 to 3.3 /spl mu/A for 5 V reverse-bias.
Nanocrystalline silicon
Strained silicon
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The damage profiles in the P + , BF 2 + , As + and B + ion-implanted silicon specimens are investigated using the nondestructive spectroscopic ellipsometry (SE) technique. The effective dielectric functions of the damaged layers are calculated using the Bruggeman's effective medium approximation, assuming that the damaged layer can be optically represented by the mixture of crystalline and amorphous silicon. By selectively using either the dielectric function of implanted amorphous silicon, or that of the relaxed amorphous silicon as the reference data for the amorphous silicon, we have improved the accuracy in modeling. The model parameters regarding the damaged layer thickness and the degree of amorphization are found to depend on implanting ion species, implantation energies, and total doses. Also, the implantation induced damage profiles are computer simulated and compared with the SE results. When annealed at lower temperatures, implanted amorphous silicon turns into the relaxed amorphous silicon and starts to recrystallize from the interface of the c -Si side due to solid-phase epitaxial growth. At annealing temperatures higher than 600°C, relaxed amorphous layers become crystalline silicon.
Nanocrystalline silicon
Ellipsometry
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Nanocrystalline silicon
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Nanocrystalline silicon
Silicon oxide
Oxide thin-film transistor
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Nanocrystalline silicon
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The effect of atomic hydrogen on thin deposited layers of amorphous silicon was studied. Amorphous silicon layers less than 10 nm thick were first deposited from fluorinated precursors. These layers were then exposed to an atomic hydrogen flux. The amorphous layers quickly relaxed to a crystalline structure. Thick films of high crystalline content were prepared through sequential repetition of the deposition and hydrogen exposure process (layer-by-layer technique). The relaxation process was studied by real time in situ ellipsometry and infrared measurements. The relationship between substrate temperature, amorphous layer thickness, hydrogen exposure time, and structure was determined. A new model in which hydrogen acts to ‘‘liquify’’ the subsurface region by breaking Si–Si bonds is suggested. From the ‘‘liquidlike’’ state the subsurface relaxes to its most thermodynamically stable constituents; during relaxation, crystalline silicon is formed with effluence of SiH4, SiFxH4−x, and SiF4 vapors.
Nanocrystalline silicon
Ellipsometry
Deposition
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Raman scattering and optical transmission measurements have been made on chemically vapor-deposited Si-rich SiO2 films. The measurements show segregated regions of amorphous silicon in the as-deposited films. Annealing the films at 1150 °C completely crystallizes the amorphous silicon. Annealing at lower temperatures produces films with both amorphous and crystalline regions.
Nanocrystalline silicon
Silicon dioxide
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