UVIII for combined e-beam and optical exposure hybrid lithography
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Multiple exposure
Immersion lithography
Abstract In this work, four types of negative electron beam resists are investigated. Electron beam lithography (EBL) experiments were conducted using EBL system ZBA23 ( Raith ) with the variable-shaped electron beam cross-section at 40 keV electron energy. Important electron beam resist characteristics such as sensitivity, dissolution rate, aspect ratio and sidewall developed profiles in the chemically amplified resist (CAR) SU-8 2000, non-CARs ma-N 2410 and ARN-7520, and inorganic negative resist HSQ XR-1514 are studied and compared. This study was motivated by the selection of a suitable resist for practical use such as large area gratings fabrication for optoelectronics.
Electron beam processing
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Abstract This paper deals with the performance of the AR-N7520 ( Allresist ) negative electron beam resist (EB resist) which was selected as an etch mask for the fabrication of gratings on GaAs substrates. The developed resist sidewall shape is crucial for this purpose. The required near-to-vertical sidewall shape can be achieved by optimizing the electron beam lithography (EBL) process based on experimental investigations and computer simulations. The sidewall shape dependence on the EBL parameters (exposure dose, resist pattern, etc.) and the proximity effect are studied.
Photoresist
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Reducing defects in the semiconductor photolithography process has become increasingly critical. Many kinds of defects can occur during photolithography, such as missing contact holes or pattern collapses that occur during developing. As the pattern size becomes finer, the exposure wavelength has been shortened from 248-nm to 193-nm, and then to 157-nm. In addition, the resin structure and the chemical characteristics of the resist material have changed greatly. Changing the resist material from I-line to 248-nm created the problem of satellite defects peculiar to chemically amplified resist. Previous studies have suggested that a satellite defect is a complex salt of PAG, quencher, and TMAH, and is soluble in water.1) Because the resist material for 157-nm lithography is highly hydrophobic and is used for making ultra-thin films, defect evaluations of it are necessary. This paper evaluates the defects arising with various kinds of 157-nm lithography resist. Just as with 248-nm resist, a deposition defect peculiar to CAR occurs with 157-nm resist, but it occurs more frequently than with 248-nm resist. Unique defects appear with 157-nm resist, but their appearance and frequency seem to depend on the resist structure. The number of missing contact holes increases when the contact angle to ultra-pure water on the 157-nm resist film raise. It is necessary to elucidate on the mechanism that the unique defect occur in 157-nm resist.
Photoresist
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Next-generation lithography
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F2 lithography and 193nm immersion lithography are considered candidates for 65nm node lithography technology. Of these two, 193nm immersion lithography, the latest incarnation of ArF lithography, has attracted more attention. Immersion lithography is different from conventional dry lithography in that the resist is exposed in liquid. Thus, the resist materials leaching from the resist film during exposure and the dissolution of acids generated by the exposure cause problems. Particularly, the resist materials leaching tends to contaminate the surface of the lens. We have been conducting studies on the leaching during exposure using the QCM method. In the present work, we apply this method to the immersion exposure. We report here the results of an in-situ measurement of the resist mass change during immersion exposure and discuss our analysis regarding the resist materials leaching from the resist film during the exposure.
Immersion lithography
Extreme Ultraviolet Lithography
Immersion
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In order to meet electron beam lithography′s(EBL) requirement for high resolution resist,the related techniques of taking Calixarene ramification as EBL resist in such processes as resist solution preparation,exposure and development were studied.JEOL JBX-5000LS electron beam lithography system was used in the experiment.The results show that under the conditions of 50 keV electron energy and 50 pA beam current,it is easy for Calixarene to form the figure of 50 nm single line or 50 nm lines and space.The advantages and disadvantages of Calixarene EBL resist were summarized through comparison with the common resists and their causes were also analyzed.As a new kind of EBL resist,Calixarene is expected to be used successfully in the fabrication of nano-structures,nano-scale devices and circuits.
Calixarene
Stencil lithography
Next-generation lithography
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Experimental and simulation results of the proximity effects study for the case of the high-resolution electron beam resist Hydrogen Silsesquioxane (HSQ) on TiO 2 thin film at 40 keV electron energy are presented and discussed. The dependence of resist pillar size and shape on the exposure dose, resist thickness and resist patterns configuration is studied for thick HSQ. The influence of the proximity effects on the precision and limitations of electron beam lithography is discussed.
Hydrogen silsesquioxane
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Hydrogen silsesquioxane
Silsesquioxane
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A theoretical and experimental investigation into the formation of resist debris due to proximity exposure compensation (PEC) in electron beam lithography is provided. The two dimensional simulation of resist contours in closely spaced rectangular patterns shows that the unsupported resist fragments (debris) originate at the top of the resist when a PEC scheme based on dose variation method is used to compensate for the proximity exposure effects within and between the patterns. It is found that by taking some precautions during electron exposure and development process, the adverse effects of resist fragments can be eliminated.
Multiple exposure
Extreme Ultraviolet Lithography
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ArF immersion lithography has been introduced in mass production of 55nm node devices and beyond as the post ArF dry lithography. Due to the existence of water between the resist film and lens, we have many concerns such as leaching of PAG and quencher from resist film into immersion water, resist film swelling by water, keeping water in the immersion hood to avoid water droplets coming in contact with the wafer, and so on. We have applied to the ArF dry resist process an immersion topcoat (TC) process in order to ensure the hydrophobic property as well as one for protecting the surface. We investigate the TC-less resist process with an aim to improve CoO, the yield and productivity in mass production of immersion lithography. In this paper, we will report TC-less resist process development for the contact layer of 40nm node logic devices. It is important to control the resist surface condition to reduce pattern defects, in particular in the case of the contact layer. We evaluated defectivity and lithography performance of TC-less resist with changing hydrophobicity before and after development. Hydrophobicity of TC-less resist was controlled by changing additives with TC functions introduced into conventional ArF dry resist. However, the hydrophobicity control was not sufficient to reduce the number of Blob defects compared with the TC process. Therefore, we introduced Advanced Defect Reduction (ADR) rinse, which was a new developer rinse technique that is effective against hydrophobic surfaces. We have realized Blob defect reduction by hydrophobicity control and ADR rinse. Furthermore, we will report device performance, yield, and immersion defect data at 40nm node logic devices with TC-less resist process.
Immersion lithography
Immersion
Photoresist
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