Nanoscale domain switching and 3-dimensional mapping of ferroelectric domains by scanning force microscopy
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Piezoresponse force microscopy
Scanning Probe Microscopy
Electrostatic force microscope
Barium titanate
Scanning Force Microscopy
Scanning Probe Microscopy
Scanning Force Microscopy
Electrostatic force microscope
Scanning gate microscopy
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For measuring the surface profile of many micro-optical components with complicated shapes, which are made of non-conductive material, the electrostatic force microscopy (EFM) was recommended. The relationship between the polarization force and the tip-to-sample distance was analyzed based on dielectric polarization theory. The prototype of the scanning electrostatic force microscopy was built. The force curves of different samples with different materials and surface shapes were detected by the EFM prototype. Both theoretical analysis and the experimental results demonstrated that the EFM system can be used to measure the surface profile of non-conductor.
Electrostatic force microscope
Scanning Force Microscopy
Scanning Probe Microscopy
Surface force
Surface charge
Polarization Microscopy
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For measuring the surface profile of many micro-optical components with complicated shapes, which are made of non-conductive material, the electrostatic force microscopy (EFM) was recommended. The relationship between the polarization force and the tip-to-sample distance was analyzed based on dielectric polarization theory. The prototype of the scanning electrostatic force microscopy was built. The force curves of different samples with different materials and surface shapes were detected by the EFM prototype. Both theoretical analysis and the experimental results demonstrated that the EFM system can be used to measure the surface profile of non-conductor.
Electrostatic force microscope
Scanning Force Microscopy
Scanning Probe Microscopy
Surface charge
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A novel force measurement using a scanning tunneling microscope as a forced oscillator is described. Results obtained from tunneling between a tungsten tip and a graphite substrate show that a maximum tip-sample force about 10−6 N exists during the constant current mode of operation. These results are in agreement with a previous model where large contact areas insulated by contaminants between tip and substrate were suggested as a cause of large tip-sample interaction forces. This method can achieve a force sensitivity of 10−8 N and for conductive substrates provide a simple, versatile alternative to existing methods of atomic force microscopy.
Scanning Probe Microscopy
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Characterization
Scanning Force Microscopy
Electrostatic force microscope
Scanning Probe Microscopy
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Abstract Atomic force microscopy has been a consistent factor in the advancements of the past decade in IC nanoprobing and failure analysis. Over that time, many new atomic force measurement techniques have been adopted by the IC analysis community, including scanning conductance, scanning capacitance, pulsed current-voltage, and capacitance-voltage spectroscopy. More recently, two new techniques have emerged: diamond probe milling and electrostatic force microscopy (EFM). As the authors of the article explain, diamond probe milling using an atomic force microscope is a promising new method for in situ, localized, precision delayering of ICs, while active EFM is a nondestructive alternative to EBAC microscopy for localization of opens in IC analysis.
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Force Spectroscopy
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We present a general theory that describes the operation of scanning force microscopy in the contact force regime. We find that force derivatives along the surface of a sample produce images that can be dramatically enhanced relative to those of surface topography. For scanning tunneling microscopy atomic force microscopy (STM/AFM) and AFM configurations, the spring constant of the cantilever and the force derivatives perpendicular to the surface of the sample determine the enhancement, respectively.
Scanning Force Microscopy
Scanning Probe Microscopy
Force Spectroscopy
Electrostatic force microscope
Chemical force microscopy
Piezoresponse force microscopy
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Abstract The surging interest in manipulating the polarization of piezo/ferroelectric materials by means of light has driven an increasing number of studies toward their light-polarization interaction. One way to investigate such interaction is by performing piezoresponse force microscopy (PFM) while/after the sample is exposed to light illumination. However, caution must be exercised when analyzing and interpreting the data, as demonstrated in this paper, because sizeable photo-response observed in the PFM amplitude image of the sample is shown to be caused by the electrostatic interaction between the photo-induced surface charge and tip. Through photo-assisted Kelvin probe force microscopy (KPFM), positive surface potential is found to be developed near the sample's surface under 405 nm light illumination, whose effects on the measured PFM signal is revealed by the comparative studies on its amplitude curves that are obtained using PFM spectroscopy mode with/without illumination. This work exemplifies the need for complementary use of KPFM, PFM imaging mode, and PFM spectroscopy mode in order to distinguish real behavior from artifacts.
Piezoresponse force microscopy
Electrostatic force microscope
Scanning Probe Microscopy
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A study of the frequency dependence of the signal in piezoresponse scanning force microscopy of ferroelectric materials has been performed. It is found that, for soft cantilevers, the signal is governed by the cantilever elastic properties. Both ferroelectric-electromechanical and electrostatic interaction contributions to the overall signal were found to depend on the frequency of the testing voltage. Indications for optimal measurement regimes are given.
Piezoresponse force microscopy
SIGNAL (programming language)
Scanning Force Microscopy
Electrostatic force microscope
Scanning Probe Microscopy
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The ferroelectric domain morphology of PbTiO3 single crystals has been investigated at room temperature by electrostatic force microscopy (EFM) and piezoelectric force microscopy (PFM) in addition to atomic force microscopy (AFM). While EFM is shown to reveal 90° a-c-domains via susceptibility contrast and 180° c-domain walls via their stray fields, PFM is used to visualize and to write 180° c-domain patterns. Owing to stabilizing negative space charges provided by the n-type PbTiO3 only negative written c-domains are stable against backswitching.
Piezoresponse force microscopy
Electrostatic force microscope
Scanning Force Microscopy
Morphology
Domain wall (magnetism)
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