Photo-induced electrical defects in low-temperature photochemical vapor-deposited silicon nitride films
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Abstract:
The electrical properties of the photochemical vapor-deposited silicon nitride/silicon interface are presented as a function of deposition temperature (70 to 200 °C). High values of interface state density Nss (about 3×1012 cm−2 eV−1), an equivalent charge at the interface Qss (about 5×1011 cm−2), and an important injection-type hysteresis of the capacitance voltage C-V curves are observed in the as-grown material. Most defects are found to be generated during the deposition process by the ultraviolet illumination used to activate the chemical reaction of the gases. Low-temperature (250 °C) and short-time (30 min) annealings eliminate part of the defects, resulting in lower values of Nss (about 1×1012 cm−2 eV−1), Qss (about 5×1010 cm−2), and reduced injection-type hysteresis.Keywords:
Hysteresis
Ultraviolet
A capacitive force sensor is developed from a liquid crystal (LC) array. Experimental result shows that the force-dependent capacitance curve shifts to larger capacitance with increasing applied voltage. Accordingly, the force range of the sensor can be divided into many sub-ranges at one of the capacitance values. The number of the input voltage is equal to that of the output capacitance in each of the sub-ranges, and the voltage-to-capacitance number is small (large) in the high (low)-force sub-range. This sensor measures force by the voltage-to-capacitance number and avoids a need to create a function for transferring the capacitance into the force.
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The equivalent capacitance formula of capacifelector (driven shield capacitance sensor ) is given by the mutual capacitance and the self capacitance of electrodes in the thesis. Comparing two cases of the capacifelector and the capacitance sensor without shield electrode, the result is found that the equivalent capacitance of capacifelector is less more than the one the capacitance sensor without shield electrode, and verified by experiment.
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A new mathematical model is proposed for the capacitance of the pinned photodiode (PPD) taking into account the potential changes at the PPD center. Aside from the electric field and the depletion region that is created by the p-n junctions, a depletion process occurs at the center of PPD. In this letter, the total capacitance of PPD is demonstrated to be composed of two series capacitances; the junction capacitance around the PPD and the inner capacitance at the PPD center. For the junction capacitance calculation, a previously developed model can be utilized. On the other hand, the inner capacitance is a result of the depletion at the PPD center, which is modeled in this letter. Both capacitances are voltage-dependent and the total series capacitance fits to the measurement data.
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One of the best detection methods for MEMS sensors is capacitance sensing method. In MEMS sensors, dimensions are reduced to microns, in such a small sizes, neglecting fringe capacitance is not reasonable, because fringe capacitance increases up to 75 percent of the total capacitance [1]. In this paper a new method for determining optimum sensitivity and linearity range considering fringing capacitance is presented. Also a novel approach decreasing fringing capacitance to increase sensitivity of capacitive sensors is proposed.
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It is shown that the usual method of disconnecting the capacitance from a Boonton 72B capacitance meter during the fill pulse in a DLTS application produces a false transient that can interfere with a true DLTS transient resulting from the emptying of traps. This false transient is due to the change in capacitance that the bridge sees when the sample is reconnected. It is shown that by switching from the sample with its capacitance Cs during the fill pulse to a dummy capacitance Cd=Cs this false transient can be avoided.
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In this paper, the transient negative capacitance characteristics are thoroughly investigated using a well calibrated TCAD simulations. The stabilization of negative capacitance and amplification is achieved across the series lumped capacitance. The impact of various internal and external factors such as polarization damping, input transition time over the negative capacitance and over amplified voltage across the lumped capacitor has been investigated. We have found that the negative capacitance (NC) effect would not be visible beyond a critical polarization damping and input transition time. Further, we also have explored the stabilization of NC with the parallel lumped capacitance and through MOSCAP.
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The definition of capacitance in ASTM D150-81 is improved by considering the definition of complex capacitance. It is concluded that since the practical capacitor always has losses, it can be suitably represented by complex capacitance. The complex capacitance is closely related to relative complex permittivity, so that the concept of complex capacitance is very important in technology, and an accurate definition of complex capacitance is necessary for electrical engineering.< >
Electrical capacitance tomography
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A structure of indium tin oxide/SiO2 embedded with Ge nanocrystal (nc-Ge)/p-Si substrate was fabricated. The capacitance of the structure can be switched to a high-capacitance or low-capacitance state by an ultraviolet (UV) illumination. The increase (or decrease) in the capacitance is accompanied with the decrease (or increase) in the oxide resistance. The capacitance switching is explained in terms of the UV illumination-induced charging and discharging in the nc-Ge.
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Considering the disadvantages of conventional capacitance sensor, a long cylindrical surface capacitance sensor of measuring the uniformity of yarn was presented. It is based on the relation between the yarn's and the sensor's capacitance, which gaves the mathematical model of long cylindrical capacitance sensor, analyses how the sensor's structures influence the changes of the capacitance. A new micro-capacitance circuit which was based on the transfer principle of charging and discharging shows the following features: while joining yarns of different thickness, the capacitance of sensor gives the corresponding output voltage, which validates the mathematical model of sensor and gains a much more exact result.
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