Nanoscale surface electrical properties of zinc oxide films investigated by conducting atomic force microscopy
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Abstract In this study, conducting atomic force microscopy was employed to investigate the nanoscale surface electrical properties of zinc oxide (ZnO) films prepared by pulsed laser deposition (PLD) at different substrate temperatures for use as anode materials in polymer light‐emitting diodes. The results show that the surface conductivity distribution of ZnO is related to its surface structure. At substrate temperatures of 150–200°C, the conducting regions may cover over 90% of the ZnO thin‐film surface, thus providing the best local conductivity. Moreover, heating at substrate temperatures of above 250°C can effectively make the conductivity on the ZnO surface uniform. In particular, at substrate temperatures of around 300°C, the conducting regions where currents are between 1 and 2 μA may cover as much as 83% of the surface, and furthermore, the transmission ratio in the visible range is higher than 80%. This is a rather ideal production temperature for the PLD for ZnO films. Microsc. Res. Tech., 2008. © 2007 Wiley‐Liss, Inc.Keywords:
Pulsed Laser Deposition
Transparent conducting film
Surface conductivity
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Surface conductance measurements on $p$-type doped germanium show a small but systematic change to the surface conductivity at different length scales. This effect is independent of the structure of the surface states. We interpret this phenomenon as a manifestation of conductivity changes beneath the surface. This hypothesis is confirmed by an analysis of the classical current flow equation. We derive an integral formula for calculating the effective surface conductivity as a function of the distance from a point source. Furthermore, we derive asymptotic values of the surface conductivity at small and large distances. The actual surface conductivity can only be sampled close to the current source. At large distances, the conductivity measured on the surface corresponds to the bulk value.
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Pulsed Laser Deposition
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In situ microscopic-four-point probe conductivity measurements were performed for ultrathin Bi films on Si(111)-7×7. From the extrapolation of thickness-dependent conductivity and decrease in conductivity through surface oxidization, we found clear evidence of large surface-state conductivity (σSS∼1.5×10−3Ω−1∕◻ at room temperature) in Bi(001) films. For the thinnest films (∼25Å), the transport properties are dominated by the highly inert surface states that are Rashba spin-split, and this suggests the possibility of using these Bi surface states for spintronics device application.
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The longitudinal magneto-conductivity of n-Hg0.8Cd0.2Te is activated at low temperatures (Tor approximately=1 T). Anomalous behaviour of the sample conductivity has been found within the activated region where the bulk conductivity decreases up to 4 orders of magnitude. The authors have investigated this anomalous behaviour using samples of different dimensions coming from two manufacturers. Using the general layer model of Petritz (1958), the observed deviations could be related to a surface layer with a temperature independent conductivity. This surface layer with a specific surface conductance of approximately=10-3 Omega -1 shunts the thermally activated bulk conductivity. Besides the sample conductivity the nonlinear hot carrier current/voltage characteristic is strongly affected by the surface layer.
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In situ microscopic-four-point probe conductivity measurements were performed for ultrathin bismuth (Bi) films formed on Si(111)-7×7. From the extrapolation of thickness-dependent conductivity and decrease in conductivity through surface oxidation, we found clear evidence of large surface-state conductivity (σss∼1.5×10−3 Ω−1/¿ at room temperature) in ultrathin Bi(001) films. For the thinnest films (∼25 Å), the transport properties are dominated by the surface states. The temperature dependence of the surface-state conductivity showed a metallic behavior down to 15K. These results point to the possibility to use these Bi surface states for spintronics device applications utilizing the largely Rashba spin-split properties.
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