A Study on 3D InGaN/GaN Nanorod LEDs
0
Citation
0
Reference
10
Related Paper
Abstract:
We demonstrate two kinds of 3D LEDs structure: warm white emission nano-pyramid LEDs and tip-free nanorod LEDs. The characteristics of 3D LEDs were discussed, which could be a future innovation for solid state lighting.Keywords:
Nanorod
Pyramid (geometry)
Wide-bandgap semiconductor
Solid-State Lighting
Periodically oriented GaN (PO-GaN) devices have been fabricated and tested in order to obtain quasi-phase matched frequency conversion. This report discusses recent measurements of second harmonic generation resonances and characterization of the PO-GaN devices.
Frequency Conversion
Wide-bandgap semiconductor
Characterization
Harmonic
Harmonic Analysis
Cite
Citations (0)
Wide-bandgap semiconductor
Cite
Citations (0)
This paper presents an overview of wide bandgap (WBG) power devices. The development and challenges of silicon carbide (SiC) and gallium nitride (GaN) power devices are summerized. A comprehensive evaluation of the performance of different devices is conducted, including static characterization and dynamic switching related tests. The paper also demonstrates the application of WBG devices in power electronic circuits. The testing results are provided to show the performance of WBG devices in different aspects.
Wide-bandgap semiconductor
Power Electronics
Characterization
Cite
Citations (12)
The room-temperature velocity-field characteristics for n-type gallium nitride and AlGaN∕GaN heterostructures, grown epitaxially on sapphire, were determined experimentally. A pulsed voltage input and four-point measurements were used on special geometry samples to determine the electron drift velocity as a function of applied electric field in the basal plane. These measurements show apparent saturation velocities near 2.5×107cm∕s at 180kV∕cm for the n-type gallium nitride and 3.1×107cm∕s at 140kV∕cm for the AlGaN∕GaN heterostructures. A comparison of these studies shows that the experimental velocities are close to previously published simulations based upon Monte Carlo techniques.
Wide-bandgap semiconductor
Saturation velocity
Velocity saturation
Cite
Citations (89)
Wide-bandgap semiconductor
Indium gallium nitride
Cite
Citations (0)
Compact models of wide-bandgap power devices are necessary to analyze and evaluate their impact on circuit and system performance. Part I reviewed compact models for silicon carbide (SiC) power diodes and MOSFETs. Part II completes the review of SiC devices and covers gallium nitride devices as well.
Wide-bandgap semiconductor
Semiconductor device modeling
Cite
Citations (132)
Methods for growing periodically alternating polarities of GaN on N-polar and Ga-polar GaN substrates have been developed. The resulting periodically oriented samples can be extended to thick growth, allowing their use in non-linear optics.
Wide-bandgap semiconductor
Cite
Citations (0)
This paper focuses on the development of 100 mm gallium nitride HEMT technology at RF Micro Devices and the utilization of GaN transistors for commercial applications such as power amplifiers, power switches and low-noise power oscillators.
Wide-bandgap semiconductor
Cite
Citations (37)
This paper explains the constraints for the use of very fast switching, wide band gap power semiconductors like silicon carbide (SiC) and gallium nitride (GaN) given in standard wire bonded power modules. Furthermore, a way to make full use of them by using an advanced packaging method is given here.
Wide-bandgap semiconductor
Power module
Cite
Citations (0)
Wide band-gap (WBG) semiconductors offer a great advantage by providing better switching and lower losses, making them ideal for higher power density and higher efficiency applications. Better switching levels are provided by some common wide bandgap materials such as Gallium Nitride (GaN) and Silicon Carbide (SiC) compared to other FETs. The GaN power device's output performance is characterized by its transfer characteristics, output characteristics, switching characteristics, and efficiency. In this study, we used a GaN MOSFET as a switch in a boost converter operating at a high switching frequency. The paper's goal is to examine the characteristics of GAN063-650WSA from Nexperia and its application as a switch in power converters.
Wide-bandgap semiconductor
Power Electronics
Cite
Citations (0)