Formation of free-standing carbon nanotube array on super-aligned carbon nanotube film and its field emission properties
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Vertically aligned carbon nanotubes, embedded in titanium oxide, have been fabricated and their electron emission behavior has been characterized. The growth of carbon nanotubes was achieved using a dc plasma enhanced chemical vapor deposition method with a mixture of acetylene and hydrogen, and nickel was used as the catalyst layer. Titanium oxide, deposited using an atmospheric pressure chemical vapor deposition, was used to encapsulate the grown carbon nanotubes and the physical properties of the as-grown carbon nanotubes as well as the encapsulated structures have been investigated using scanning electron microscopy. By a sequential polishing and plasma ashing, it is possible to open up the top side of the encapsulated carbon nanotubes. Also by means of a reactive ion etching, carbon nanotubes are exposed with an inherent gate surrounding each one. This technique allows the evolution of individually processed nanotubes with no need of nanolithography. The emission of electrons from carbon nanotubes was examined and a preliminary field emission display was prepared.
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The electron field emission from carbon nanotubes on nanocrystalline diamond films was investigated. Carbon nanotubes and nano-diamond films were deposited on Si substrates by hot filament chemical vapor deposition. The experimental results showed that the carbon nanotubes on nanostructured films exhibited a lower value of the turn-on electric field than those of carbon nanotubes and nano-diamond. It was found that the turn-on field of nanotubes on nano-diamond was about 0.9V/μm, which was lower than those of carbon nanotubes and nano-diamond.
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Due to their extraordinary electrical, thermal and mechanical properties, carbon nanotubes have been foreseen as potential materials for electronics devices in the future. To integrate carbon nanotubes in electronic applications, carbon nanotubes would need to be grown on different metal layer. In this study, carbon nanotubes growth with Ni as catalyst on three different support layers, Cu, Al and Cr, by hot filament chemical vapor deposition (HFCVD) is reported. The nanotubes were grown using C2H2 acetylene as carbon feedstock, in a hydrogen and nitrogen atmosphere. The catalyst layers and their support layers were deposited by magnetron sputtering technique. Deposited films were annealed at 600 °C for 10 minutes before exposing to C2H2 for the growth of nanotubes at same temperature for another 10 minutes. The effects of the support layer have been investigated with reference to nanotubes formation. The morphology and microstructure of the films were measured and analyzed by scanning electron microscopy (SEM) and Raman spectrometer. It was found that reaction of the catalyst with its supporting layer has significant effects on the growth of nanotubes. For Cu or Cr as support layer, its effect on the nanotubes growth was minimal. However Al support layer prevented the growth of carbon nanotubes. The possible mechanisms for the observed results are proposed.
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Introduction to Carbon.- Introduction to Carbon Nanotubes.- Growth Techniques of Carbon Nanotubes.- Chemical Vapor Deposition of Carbon Nanotubes.- Physics of Direct Current Plasma-Enhanced Chemical Vapor Deposition.- Technologies to Achieve Carbon Nanotube Alignment.- Measurement Techniques of Aligned Carbon Nanotubes.- Properties and Applications of Aligned Carbon Nanotube Arrays.- Potential Applications of Carbon Nanotube Arrays.
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A unique type of carbon nanotubes with 2 to 5 layers of sidewalls and diameters less than 10 nm was synthesized by the thermal chemical vapor deposition (CVD) method with MgO supported Fe/Mo catalyst. Unlike the typical CVD grown multi-walled carbon nanotubes, these few-walled carbon nanotubes (FWNTs) have a high degree of structural perfection. They have enhanced electron field emission characteristics compared to the current commercial nanotubes, with a low threshold field for emission and improved emission stability.
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We have synthesized by chemical vapor deposition (CVD) single-, double-, and multiwalled carbon nanotubes without magnetic impurities. In particular, we have applied a rhenium-based CVD technique yielding nonmagnetic carbon nanotubes with diamagnetic Re particles. In addition, carbon nanotubes prepared with iron as catalyst particles are annealed at very high temperatures in which the catalyst material is completely vaporized, while the carbon nanotubes are structurally preserved. Detailed magnetic studies show for both approaches a clear diamagnetic behavior typical for pure carbon nanotubes but no indication of ferromagnetic or paramagnetic material.
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Carbon nanotubes and Ga-doped carbon nanotubes were synthesized by pyrolysis and then purified. Thin films of the purified samples were fabricated by a screen-printing method. Field emission properties of these films were studied. It was shown that the turn-on field of carbon nanotubes and Ga-doped carbon nanotubes was 2.22V/μm and 1.0V/μm, and the current densities were 400μA/cm2 and 4000μA/cm2 for carbon nanotubes and Ga-doped carbon nanotubes at applied fields 2.4V/μm. The electron field emission properties of the gallium-doped nanotubes were much better than those of carbon nanotubes. Mechanisms of field emission of gallium-doped nanotubes were explained.
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