Electroluminescence from ZnO nanowire-based p-GaN/n-ZnO heterojunction light-emitting diodes
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Abstract Electroluminescence of inorganic semiconductors, as one of the principal application directions of luminescence phenomena, is treated in detail. At first, a short historical note is given. Two basic types of electroluminescence are distinguished: High-field electroluminescence and injection electroluminescence. Experimental conditions for and microscopic mechanisms of the high-field electroluminescence are explained (Schottky effect, Poole–Frenkel effect, impact excitation, and ionization). Typical intensity, spectral and temporal characteristics of the emitted luminescence radiation are illustrated. As for injection electroluminescence, basic electric properties of a p-n (homo)junction are reviewed. Representative intensity, spectral and temporal characteristics of light-emitting diodes, made of various semiconductors, are presented. A particular note is devoted to electroluminescence of a p-n junction biased in the reverse direction.
Impact ionization
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Four rather disparate aspects of electroluminescence are described. Multiple primary peaks are found in the electroluminescence of a typical :Cu,Cl phosphor and are explained on the basis of field‐controlled thermal release of trapped electrons. Carrier transit times between traps and centers are shown to be negligible in ordinary electroluminescence. By means of a model of a p‐i‐n junction, carrier injection is shown to be consistent with normal delayed emission and buildup in electroluminescence. A typical electroluminescent phosphor is made photoconductive by the blue component of its own emission.
Electroluminescent display
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光的吸收的理解是必要的为有效光电并且有 IIIV nanowire 数组的 photodetection 应用。这里，我们相关有当模特儿的实验并且试验性地为改变 nanowire 直径和长度在 InP nanowire 数组验证光的预言的吸收。我们发现那在 400 nm 的程度中的长 nanowires 能吸收的 2,000 nm 有在乐队上面的精力的 94% 事件光豁开并且作为后果，点亮在简单光线光学，描述哪个将在 nanowires 之间旅行能被 nanowires 高效地吸收。当光从进数组最高区域的空气被联合时，我们的大小证明为长 nanowires 的吸收由插入思考损失是有限的。这些思考损失能被最近把一条更小的直径介绍给 nanowire 部分到空气减少最高区域。为有如此的 nanowire 形态学调整的 nanowire 数组，我们发现吸收比与增加 nanowire 的其余部分的直径单调地增加。
Photodetection
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The possibility of the electroluminophore semiconductors of the II-VI group to the construction of the electric field intensity sensors are presented. Using ZnS:Mn and ZnS:Cu luminophors, the fiber optic intensity of electric field sensors were elaborated. This kind of electric field sensors belong to the group of intensity fiber optic sensors. Electroluminescent phenomena of two groups pf electroluminescent effects are classified as: 1) internal electroluminescence and 2) carrier-injection electroluminescence. In the paper there are described sensors based on carrier-electric injection electroluminescence.
Intensity
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The basic principles of organic electroluminescence and organic light emitting diodes are presented.The recent progress of low molecular weight complex electroluminescent materials in summarized.Their photoelectronic properties,luminescent efficiency and stability of the electroluminescent devices are discussed.
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A ruthenium polypyridyl complex has been synthesized and examined as an emitter material in thin film electroluminescent devices. This material exhibits photoluminescent and electroluminescent effects as well as several reversible one-electron oxidation and reduction processes. Electroluminescent devices fabricated from this ruthenium complex either via spin coating methods or self-assembly techniques exhibit relatively high electroluminescent efficiencies and luminance levels in some cases as high as 100 cd/m2.
Electroluminescent display
Spin Coating
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Electroluminescence from SiO2 has been studied both experimentally and theoretically. Numerical simulations have been carried out to investigate electroluminescence and impact ionization processes. A firm connection between electroluminescence and impact ionization has been shown.
Impact ionization
Silicon dioxide
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We present a method to improve and stabilize electroluminescence from porous silicon. The electrical breakdown power increases by a factor of more than 25. The electroluminescence intensity is about 30 times higher compared to untreated samples.
Porous Silicon
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Eelectroluminescence is a solid light. Based on the different structure and working principle, Electroluminescence (EL) can be divided into inorganic electroluminescence and organic electroluminescence. In this paper some rresearches on electroluminescence are reviewed. The principle, structure and application of inorganic electroluminescence and organic electroluminescence are illustrated. Some recent focuses are discussed. EL has wide future. They are better than other display technologies for the flat panel display applications.
Electroluminescent display
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