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    Rapid thermal annihilation of microdefects in CZ Si crystals
    Hongfa LuanXiufeng ChengYang XiaGuohu ZhangPei-Hsin TsienFu Qin
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    Abstract:
    Rapid thermal annihilation of microdefects in CZ Si crystals has been studied. The microdefects can be effectively annihilated by RTA for 5/spl sim/60 sec. at temperature over the range of 900/spl sim/1200/spl deg/C. The annihilation of microdefects is not dependent on annealing duration. The concentration of the interstitial oxygen impurities is remarkably increased with microdefect annihilation. It is concluded that the microdefects are involved during RTA process. It is believed that the thermal stress at microdefects induced by RTA is the main cause of microdefect annihilation.
    Keywords:
    Annihilation
    Atmospheric temperature range
    Topics:
    Silicon and Solar Cell Technologies
    Semiconductor materials and interfaces
    Thin-Film Transistor Technologies
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