Silver microgrid transparent conductive electrode based on bulk plasmon effect for ultraviolet wavelength application
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Abstract Silver microgrid/TiO 2 /ITO (indium tin oxide glass) sandwich‐structure photodetectors with various pore sizes are fabricated by a microsphere lithography strategy. This ultraviolet (UV) detector possesses ohmic contact characteristics. The high UV transmittance results from an enhanced bulk plasmon effect of the silver microgrid electrode. Photoelectric properties of the sandwich structure with various pore sizes are discussed. The short transport distance of carriers and the low blocking of incoming UV light are the main reasons of the high activity for silver microgrid/TiO 2 /ITO sandwich‐structure photodetectors. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)Keywords:
Ohmic contact
Ultraviolet
Indium tin oxide
Photoelectric effect
It is usually needed to analyze the risk of high energy laser effecting on photodetector in electro-optical EW system test and the design of photoelectric measure system. Firstly, the transmission formula of 1.06 μm and 10.6 μm laser in atmosphere is introduced, and the optical gain of photoelectric system is analyzed. Then the energy density of photodetector received on the base of actual CCD and infrared camera parameters is calculated. At last, by comparing with damage threshold of photodetector, the damage risk of photodetector can be received. It can be referenced in electro-optical EW system test and the design of photoelectric measure system.
Photoelectric effect
Photoelectric sensor
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A study of NiAuGe contacts to InP has been undertaken. Various cleaning procedures, metalisation combinations and heat treatments have been investigated. During electrical optimisation and subsequent physical analysis the importance of Ni in the NiAuGe contact to InP became apparent. Major differences between the GaAs/NiAuGe and InP/NiAuGe contacts are suggested. TEM micrographs, for the InP system, show an ordered layer structure of constituent phases. These observations are confirmed by RBS results and also agree with other investigations. The most important observations are those associated with nickel and its role during the formation of ohmic contacts to InP. Nickel was found to form ohmic contacts in a similar manner to the ohmic metalisation NiAuGe. As the alloying temperature was increased to the optimum of 450°C, the effective barrier height was initially observed to increase, then above 350°C to fall as the contact became ohmic. NixPy phases are responsible for ohmic behaviour similar to those observered in the NiAuGe ohmic contact.
Ohmic contact
Indium phosphide
Nickel compounds
Phosphide
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Liquid crystal can be used as optical switch for optical communication. The loss of liquid crystal optical switch mainly depends on the transmittance of the transparent electrode. Indium Tin Oxide (ITO) has a high transmittance in visible band but a low transmittance in IR band. Based on determination of the complex refractive index of Indium Tin Oxide, some transparent electrodes with a high transmittance in the range of 1.5mm~1.6mm have been designed and prepared by use of the design thinking for inducing filters in optical coatings. The loss of the whole device is less than 0.4dB and its corresponding resistance is 350W/□.
Indium tin oxide
Optical transparency
Visible spectrum
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Three kinds of CMOS compatible photosensors, P+/Nwell photodetector, Nwell/Psub photodetector and N+/Psub photodetector, were designed by using SMIC 0.18μm standard CMOS technology. Some critical parameters, such as responsivity, dark current and maximal response wavelength were analyzed based on the mathematic model established. The influences of some technology parameters, such as doping concentration, junction depth, were pointed out as well. The experiment results indicate that P+/Nwell photodetector can reach a maximal sensitivity of 0.08 A/W at 460nm with 55nA/cm2 dark current, Nwell/Psub photodetector has a maximal sensitivity of 0.35A/W at 580nm with 64nA/cm2 dark current and N+/Psub photodetector attains a maximal sensitivity of 0.29 A/W at 580nm with 600nA/cm2 dark current. The test results show that the photodetectors designed agree with theoretical analysis basically and have prominent performance on sensitivity and response wavelength.
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Ohmic contact is one of the fundamental requirements for GaN detectors with high performance.But Ohmic contacts on p-type GaN with low specific contact resistance are more difficult to realize than those on n-type GaN.In this paper,research about Ohmic contacts on p-type GaN is reported.With Au and Cr/Au deposited on p-type GaN materials and appropriate annealing process,good Ohmic contacts have been obtained.Specific contact resistances of the Au/p-GaN and Cr/Au/p-type GaN structures are 7.88×10~(-2)Ω·cm~2 and 1.94×10~(-2)Ω·cm~2 respectively.
Ohmic contact
Contact resistance
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A novel stacked Ti/Al based Ti/Al/Ti/Al/Ti/Al/Ti/Al/Ni/Au Ohmic contact structure is optimized. Compared with the conventional alloyed Ti/Al/Ni/Au Ohmic contact structure, the novel Ohmic contact structure can obtain much lower contact resistance and specific contact resistivity. Through analysis of x-ray diffraction spectra, cross-section transmission electron microscopy images and corresponding electron dispersive x-ray spectroscopy spectra in the novel stacked Ti/Al based Ohmic structure, the reactions between metals and the AlGaN layer were proven to be stable, uniform and continuous, which produced smooth contact interface. In addition, the top Au layer was prevented from diffusing downwards to the metal/AlGaN interface, which degraded the Ohmic performance.
Ohmic contact
Contact resistance
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Photoelectric effect
Photoresistor
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Widespread Ni/SiC contact after annealing at high temperatures provides good ohmic contact. We managed to prepare Si/SiC annealed ohmic contacts with comparable qualities as Ni/SiC ones. However, the main benefit of these Si/SiC ohmic contacts lies in that they retain their ohmic properties even after they are etched off which brings grounds for promising secondary contacts. Etched contacts were analyzed by XPS and surface composition alteration was observed.
Ohmic contact
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Ohmic contact
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Ohmic contacts on p-doped 4H-SiC are essential for the fabrication of a wide range of power electron devices. Despite the fact that Ti/Al based ohmic contacts are routinely used for ohmic contacts on p-doped 4H-SiC, the underlying contact formation mechanisms are still not fully understood. TLM structures were fabricated, measured and analyzed to get a better understanding of the formation mechanism. SIMS analyses at the Ti3SiC2-SiC interface have shown a significant increase of the surface near Al concentration. By using numerical simulation it is shown that this additional surface near Al concentration is essential for the ohmic contact formation.
Ohmic contact
Contact resistance
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