Semiconductor device structure based on fullerene: Ag/C60 thin film Schottky barrier

Eugene A. Katz,D. Faiman,S. Shtutina,B. Mishori,Yoram Shapira

Semiconductor device structure based on fullerene: Ag/C60 thin film Schottky barrier

2008

Eugene A. Katz
D. Faiman
S. Shtutina
B. Mishori
Yoram Shapira

A possibility to produce a Schottky barrier at the Ag/C60 thin film interface has been demonstrated. The device structure exhibited rectifying behavior in the dark and photovoltaic properties.

Keywords:

Thin film
Fullerene
Schottky barrier
Photoconductivity
Double layer (surface science)
Semiconductor device
Work function
Metal–semiconductor junction
Optoelectronics
Electronic engineering
Materials science
semiconductor technology
structure based

Correction
Source
Cite
Save
Machine Reading By IdeaReader

References

Citations