Etching undercut is minimized to provide a method of cleaning metal and peeling

Providing the etching undercut is minimized to provide a method of cleaning metal and peeling the subsequent metal deposition. In one embodiment, the first standard photolithographic techniques and by developing the first resist developer will be selected top layer of energy-sensitive resist patterning range, the resist is exposed to a bottom portion layer, which is sensitive to different selected energy range. Then, by anisotropic etching, using the top resist layer as an etching mask, the exposed portions of the resist layer is removed at the bottom, to expose the portion of the substrate below. Such that the top of the photoresist around the bottom opening in the bottom of the cut in the resist is minimized. Then, resist is patterned bilayer laminate obtained as an etching mask for subsequent etching of the substrate material below the exposed portion. Due to the absence of the undercut at the bottom of the resist layer, so that etching of the substrate material relative to the top edge of the opening of the photoresist undercut minimized.