Model for Predicting the Threshold Voltage of Tunnel Field-Effect Transistors Using Linear Regression

A linear regression-based method for extracting the threshold voltage of tunnel field-effect transistors (TFETs) is presented. The minimum tunneling width at the threshold voltage of a TFET is expressed as a linear function of tunneling widths corresponding to gate voltages. The regression is carried out using known simulated TFETs and verified on unknown TFETs, achieving an R2 value of 96.50%. The model is compared with and verified against methods and devices reported in literature, confirming that it is effective for predicting the threshold voltage.