Pulsed Green-Laser Annealing for Single-Crystalline Silicon Film Transferred onto Silicon wafer and Non-alkaline Glass by Hydrogen-Induced Exfoliation

A single-crystalline Si film was transferred onto a Si wafer and non-alkaline glass by hydrogen-induced exfoliation and the effect of pulsed green-laser annealing was investigated. Above a laser energy of 1285 mJ/cm2, the crystallinity of the Si film was recovered both on the Si wafer and the glass. The linewidth of micro-Raman spectra of the Si film on the Si wafer was constant at about 3.9 cm-1 which was close to that for commercial silicon-on-insulator (SOI) wafer. On the other hand, the linewidth of the Si film on the glass was constant at about 4.1 cm-1. A Raman peak shift toward a lower frequency was observed on the Si film on the glass; it was assumed that the difference of the linewidth on the Si wafer and that on the glass originated from the tensile stress in the Si film due to the difference of thermal expansion coefficients. The results of numerical simulation suggested that the thickness of the region damaged by hydrogen ion implantation was greater than 300 nm; the damaged region had to be melted and resolidified to obtain the recovered single-crystalline silicon upon pulsed laser annealing.