STT-MRAM for Embedded Memory Applications

With traditional embedded memories, such as eFlash and SRAM, facing major challenge of scaling beyond 28 nm, STT-MRAM stands out from competing emerging NVM technologies as the preferred technology for both embedded flash and SRAM replacements. Having high data retention, reflow compatibility and high endurance, MRAM is ready for production to replace eFlash at 28 nm node and below. On the other end of the spectrum, by tuning magnetic properties of magnetic tunnel junction storage layers, MRAM can achieve high speed/endurance, and offer higher density compared with embedded SRAM at advance nodes.