Single source precursor-based HV-MOCVD deposition of binary group 13-antimonide thin films

Abstract Tailor-made single source precursors of the type [R 2 GaSbR′ 2 ] x ( R , R ′ = alkyl) have been prepared by a novel synthetic pathways. According to their very low vapor pressures, a specifically designed HV-MOCVD reactor was built, which can be used for the deposition of GaSb material films. The influence of several process parameters such as substrate temperature and reactor geometry on the quality of the resulting films will be discussed.