FinFET SCR: Design challenges and novel fin SCR approaches for on-chip ESD protection

For the first time, physical insights into the missing SCR action in planar equivalent Fin SCR devices with the help of TCAD are presented, which has leveraged exploring challenges and fundamental roadblock in designing Fin SCRs. Key role of contact silicidation in Fin technology is discovered. The new understanding has allowed engineering conventional designs to resume SCR action. Finally, a novel Fin SCR design is disclosed, which offers an area efficient current conduction beside device scalability.