Growth of M- and A-plane GaN on LiGaO{sub 2} by plasma-assisted MBE

We have performed non‐polar M‐ and A‐plane GaN growth on LiGaO2 (LGO) by plasma‐assisted molecular beam expitaxy (MBE). We demonstrate that non‐polar GaN growth on LGO yields high phase purity and flat surfaces. We find that annealing of the substrates prior to growth is a suitable method for avoiding a peeling off of the film from the substrate after growth.