Precise quantized Hall resistance measurements in GaAs/AlxGa1−xAs and InxGa1−xAs/InP heterostructures

Measurements of the quantized Hall resistance RH (i) (i = 2 or 4) in 7 different heterostructures (six GaAs based, one InP based) are reported. RH (i) is measured in terms of ΩLCIE by means of a resistance-ratio measurement bridge using a cryogenic current comparator. The peak-to-peak scatter of the results is 8.5 × 10-8. An estimation of RH (i = 2) in terms of ΩLCIE is given with a 1 σ (one standard deviation) total uncertainty of 2.2 × 10-8.