Old Web
English
Sign In
Acemap
>
Paper
>
Epitaxial Growth of Active Si on Top of SiGe Etch Stop Layer in View of 3D Device Integration
Epitaxial Growth of Active Si on Top of SiGe Etch Stop Layer in View of 3D Device Integration
2021
Roger Loo
Anne Jourdain
Gianluca Rengo
Clement Porret
Andriy Hikavyy
M. Liebens
Lucas Becker
Peter Storck
Gerald Beyer
Eric Beyne
Keywords:
Materials science
Epitaxy
Optoelectronics
Correction
Source
Cite
Save
Machine Reading By IdeaReader
25
References
1
Citations
NaN
KQI
[]