Unlocking doping and compositional profiles of nanowire ensembles using SIMS

Dynamic and time-of-flight (TOF) secondary ion mass spectrometry (SIMS) was performed on vertically standing III?V nanowire ensembles embedded in Cyclotene polymer. By embedding the NWs in Cyclotene, the top surface of the sample was made planar, while the space between the NWs was filled to protect the background substrate from the ion beam, thus allowing for the NWs to be sputtered and analyzed evenly as a function of depth. Using thin film standards, SIMS analysis was used to calculate the impurity dopant concentration as a function of height in the NW ensemble. This marked the first use of conventional SIMS to accurately determine the doping density with excellent depth resolution. Additionally, this is the first presentation of SIMS as the only reported tool for characterizing the segment height uniformity of any arbitrary axial heterostructure NW ensemble.