Erbium-Doped ZnO Prepared by Vapor-Phase Transport

Erbium-doped ZnO has been prepared by vapor-phase transport. ZnO powder, graphite powder, and Er2O3 powder were mixed at a molar ratio of 1:1:0.2 and heated at 1054 °C. Erbium-doped ZnO was deposited on n-type (100)Si wafers located in the same temperature zone. The photoluminescence of the as-deposited sample shows a strong ZnO band-gap emission near 378 nm. After annealing, green emissions at 548, 566, 576, 585, and 595 nm were observed, which correspond to the 4 f inner shell transition of erbium from 2H11/2 to 4I15/2 and 4S3/2 to 4I15/2. Our results indicate that vapor-phase transport is an alternative route for doping ZnO with erbium.