Evidence of filamentary switching and relaxation mechanisms in GexSe1-xOTS selectors

Comprehensive experimental and simulation evidence of the filamentary-type switching and V th relaxation mechanism associated with defect charging/discharging in Ge x Se 1-x ovonic threshold switching (OTS) selector is reported. For the first time, area independence of conduction current at both on/off states, Weibull distribution of time-to-switch-on/off (t-on/off), Vth relaxation and its dependence on time, bias and temperature, which is in good agreement with our first-principles simulations in density functional theory, provide strong support for filament modulation by defect delocalzation/localization that is responsible for volatile switching.