Triaxial strain engineering of magnetic phase in phosphorene

In the present paper, we theoretically address and predict the magnetic properties of monolayer phosphorene under different triaxial strains. For this purpose, we use the tight-binding Hamiltonian model and the Harrison rule aiming at studying the strain-induced phosphorene structure. Our findings indicate how the electronic phase transition is related to the magnetic phase transition in phosphorene. The details of this connection are extracted from the bandgap-dependent Neel temperature of the antiferromagnetic ground state phase as well as the state degeneracy-dependent Pauli spin paramagnetic susceptibility. We found that phosphorene keeps its semiconductor nature for the uniform and nonuniform triaxial strains (both compressive and tensile strains), resulting in no magnetic phase transition, whereas the in-plane uniform triaxial strains lead to a semiconductor-to-semimetal and consequently an antiferromagnetic-to-ferromagnetic phase transition on average. Furthermore, we show that the armchair edge possesses the most contribution to the electronic and magnetic phases of monolayer phosphorene. These results provide useful information for future experimental research studies in both optoelectronic and spintronic applications.In the present paper, we theoretically address and predict the magnetic properties of monolayer phosphorene under different triaxial strains. For this purpose, we use the tight-binding Hamiltonian model and the Harrison rule aiming at studying the strain-induced phosphorene structure. Our findings indicate how the electronic phase transition is related to the magnetic phase transition in phosphorene. The details of this connection are extracted from the bandgap-dependent Neel temperature of the antiferromagnetic ground state phase as well as the state degeneracy-dependent Pauli spin paramagnetic susceptibility. We found that phosphorene keeps its semiconductor nature for the uniform and nonuniform triaxial strains (both compressive and tensile strains), resulting in no magnetic phase transition, whereas the in-plane uniform triaxial strains lead to a semiconductor-to-semimetal and consequently an antiferromagnetic-to-ferromagnetic phase transition on average. Furthermore, we show that the armchair edge po...