MICROSTRUCTURES OF THE MICRO-CRYSTALLINE SILICON THIN FILMS PREPARED BY HOT WIRE CHEMICAL DEPOSITION WITH HYDROGEN DILUTION
1998
AbstractMicrocrystalline silicon thin films were prepared by hot wire chemical vapor deposition with hydrogen dilution. Structures of the films were examined by Raman scattering, Fourier transform infrared (IR) and small angle Xray scattering (SAXS)etc. It is shown that with increasing flow ratio RH=H_2/(H_2+SiH_4) the volume fraction of crystalline increases while the hydrogen content decreases. The result from SAXS indicates that with increasing dilution ratio, the density of the film is increased, which implies the volume fraction of microvoids is reduced. Combining with the data from IR and SAXS, we conclude that SiH_2 vibration mode in hydrogenated microcrystalline silicon thin film is located at the grain boundaries rather than in the internal surface of the micro-voids.
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