Reducing Dislocations in GaAs and InP

Currently, the major issue in the growth of GaAs and InP single crystal density. This is necessitated by optical and electronis device performance requirements. This paper reviews the major appplications of these III–V compounds and then describes the theoretical analysis from which a practical realization of dislocation elimination in crystal growth can be based. Also outlined are recent developments in low temperature gradient growth and hardening by In-alloying that in some judicious combination offer the hope to meet device and IC fabrication objectives