Method for roughening surface of ITO (indium tin oxide) transparent conductive film
2011
The invention relates to a method for etching a conductive film by using a self-assembled thin film as a mask, which comprises the following steps of: 1. taking a sapphire substrate and growing a nitride epitaxial layer on the sapphire substrate; 2. making the conductive film grow on the nitride epitaxial layer; 3. making a photonic crystal thin film grow on the conductive film by adopting a self-assembling method to form the mask; 4. carrying out annealing processing; 5. etching the conductive film below the mask by adopting an etching method to form a roughened conductive film surface; and 6. washing to remove the residual photonic crystal thin film to complete preparation.
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