Effective-exposure-dose monitoring technique in EUV lithography
2010
EUV lithography is a promising candidate for 2x-nm-node device manufacturing. Management of effective dose is
important to meet the stringent requirements for CD control. Test pattern for a lithography tool evaluation, the effective
dose monitor (EDM), shows good performance in the dose monitoring for optical lithography, for example, KrF
lithography. The EDM can measure an exposure dose with no influence on defocus, because the image of an EDM
pattern is produced by the zero-th-order ray in diffraction only. When this technique is applied to EUV lithography, the
mask shadowing effect should be taken into consideration. We calculated the shadowing effect as a function of field
position and applied it to correction of the experimental dose variation. We estimated the dose variation in EUV
exposure field to be 2.55 % when corrected by the shadowing effect. We showed that the EDM is useful for EUV
lithography.
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