Position-Sensitive and High-Performance Photodetection Observed in Carbon NanoFilm Based on Silicon Carbide
2019
A high-performance photodetector is reported in a carbon/silicon carbide (SiC) structure. Besides the advantages of owning a significant amplification on photocurrent, the detector has a wide detection zone and a strong immunity to temperature variation. Demonstrated in experiments, these properties are mainly contributed by the combination of applied electric voltage and local electromagnetic field enhancement at structure surface. Because of the merits of low cost and high photoelectric performance, this structure is considered to be a promising prospect in photodetection.
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