Semiconductor devices and methods for forming them

According to one embodiment of the present invention, a method for forming a semiconductor device forming a device region (110) in a substrate (100). The device region (110) extends continuously from one side wall of the substrate (100) to an opposite side wall of the substrate (100). The method further comprises forming trenches (50) in the substrate (100). The trenches (50) divide the device region (110) in active areas. The method further comprises a separating of the substrate (100) by separating the substrate (100) along the trenches (50).