Low-temperature properties of a polysilane studied by photochemical hole burning

Poly(trimethylphenylsilane) (PSI) with tetraphenylporphin (TPP) guest was studied. Cyclic annealing experiments were performed to study the thermal stability of photochemical holes of TPP burnt in the PSi system at low temperatures. The low-energy excitation mode of the PSi was investigated by PHB measurements and its origin is attributed to phenyl groups. The temperature dependence of the Debye-Waller factor for the TPP-PSi system was estimated. The change in hole width depending on the conditions of sample preparation is discussed